FDG6332C_F085 Fairchild Semiconductor, FDG6332C_F085 Datasheet - Page 2

• Manufacturer Part Number: FDG6332C_F085
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6332C_F085

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 700mA, 600mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 113pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V @ Q1
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.7 A @ Q1 or 0.6 A @ Q2
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG6332C_F085TR

Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
g
I
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSF
D(on)
d(on)
r
d(off)
f
FS
BV
V
GS(th)
DS(on)
iss
oss
rss
g
gs
gd
GS(th)
DSS
T
T
DSS
J
J
/I
/I
GSSR
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
On–State Drain Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Parameter
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
T
A
V
V
I
I
V
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
For Q1:
V
V
For Q2:
V
V
For Q1:
V
V
For Q2:
V
V
D
D
D
D
= 25°C unless otherwise noted
GS
GS
DS
DS
GS
GS
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
GS
GS
DS
DS
DS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
GS
= 250 A,Ref. to 25 C
= –250 A,Ref. to 25 C
= 250 A,Ref. To 25 C
= –250 A,Ref. to 25 C
=–4.5 V, I
=10 V, V
=–10 V, V
=10 V, V
=–10 V, V
=10 V, V
=–10 V, V
= 4.5 V,
= –4.5 V, R
= 4.5 V,
= –4.5 V, R
=10 V,
=–10 V,
=10 V,
=–10 V,
= 0 V,
= 0 V,
= 16 V,
= –16 V,
=
=
= V
= V
= 4.5 V, I
= 2.5 V, I
= 4.5 V, I
= –4.5 V, I
= –2.5 V, I
= 5 V
= –5 V
= 4.5 V, V
= –4.5 V, V
Test Conditions
GS
GS
12V , V
12 V, V
, I
, I
D
D
GS
GS
GS
= 250 A
= –250 A
D
GS
GS
GS
I
I
I
I
I
I
R
I
I
R
D
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
=–0.6 A,T
D
D
D
D
D
D
D
D
D
D
D
D
GEN
V
V
DS
DS
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
GEN
GEN
GEN
= –0.5 A
= 1 A
= –1 A
= 0.7 A
= –0.6 A
= 250 A
= –250 A
=0.7 A
=0.6 A
=0.7A,T
= 0.7 A
= –0.6A
= –0.6 A
GS
GS
DS
DS
= 5 V
= –5 V
= 6
= 6
= 6
= 6
= 0 V
= 0 V
= 0 V
= 0 V
J
J
=125 C
=125 C
Q1
Q2
Q1
Q2
Q1
Q2
Min
–20
-0.6
0.6
20
–2
1
Typ Max Units
–1.2
–2.8
0.24
–14
180
293
247
300
470
400
113
114
1.1
2.8
1.8
5.5
1.5
1.7
1.1
1.4
0.3
0.3
0.4
14
34
24
16
14
3
9
5
7
9
6
–1.5
300
400
442
420
630
700
1.5
3.4
1.5
–1
100
100
10
11
15
25
18
12
FDG6332C_F085 Rev C2 (W)
1
3
2
mV/ C
mV/ C
m
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
A