FDG6320C Fairchild Semiconductor, FDG6320C Datasheet - Page 7
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FDG6320C
Manufacturer Part Number
FDG6320C
Description
MOSFET N/P-CH DUAL 25V SC70-6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDG6320C.pdf
(9 pages)
Specifications of FDG6320C
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 Ohm @ 220mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
220mA, 140mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
0.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
9.5pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
4 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
0.2 S, 0.12 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
0.22 A @ N Channel or 0.14 A @ P Channel
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG6320C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Electrical Characteristics: P-Channel
0.005
8
6
4
2
0
0.03
Figure 17. Gate Charge Characteristics.
0
0.3
0.1
Figure 19. Maximum Safe Operating Area.
I
1
D
1
= -0.14A
R
SINGLE PULSE
JA
V
0.1
T
= See Note 1b
GS
A
2
= 25°C
= -4.5V
- V
DS
Q , GATE CHARGE (nC)
3
g
, DRAIN-SOURCE VOLTAGE (V)
0.2
V
DS
5
= -5V
0.3
-10V
-15V
10
0.4
20
0.5
40
50
40
30
20
10
0.0001
0
(continued)
0.5
40
20
10
5
3
1
Figure 18. Capacitance Characteristics.
0.1
Figure 20. Single Pulse Maximum Power
f = 1 MHz
V
GS
0.001
0.2
= 0 V
-V
DS
0.01
SINGLE PULSE TIME (SEC)
, DRAIN TO SOURCE VOLTAGE (V)
0.5
Dissipation.
1
0.1
2
1
SINGLE PULSE
R
5
JA
T = 25°C
A
=415°C/W
10
10
FDG6320C.Rev D
C rss
C iss
C oss
20
200