FDG6320C Fairchild Semiconductor, FDG6320C Datasheet - Page 2

MOSFET N/P-CH DUAL 25V SC70-6

FDG6320C

Manufacturer Part Number
FDG6320C
Description
MOSFET N/P-CH DUAL 25V SC70-6
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDG6320C

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 Ohm @ 220mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
220mA, 140mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
0.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
9.5pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
4 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
0.2 S, 0.12 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
0.22 A @ N Channel or 0.14 A @ P Channel
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG6320C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDG6320C
Quantity:
4 500
Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
DSS
DSS
GSS
D(ON)
FS
BV
GS(th)
V
DS(ON)
iss
oss
rss
DSS
GS(th)
DSS
/ T
/ T
J
J
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
(
T
A
= 25
O
C unless otherwise noted )
Conditions
V
V
I
I
V
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
N-Channel
V
f = 1.0 MHz
P-Channel
V
f = 1.0 MHz
D
D
D
D
GS
GS
DS
DS
GS
GS
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
= 250 µA, Referenced to 25
= -250 µA, Referenced to 25
= 250 µA, Referenced to 25
= -250 µA, Referenced to 25
= 20 V, V
= 10 V, V
= -10 V, V
=-20 V, V
= V
= V
= 5 V, I
= -5 V, I
= 0 V, I
= 0 V, I
= 8 V, V
= -8 V, V
= 4.5 V, I
= 2.7 V, I
= -4.5 V, I
= -2.7 V, I
= 4.5 V, V
= -4.5 V, V
GS
GS
, I
, I
D
D
D
D
D
D
DS
= 250 µA
= -250 µA
GS
= 250 µA
= -250 µA
= 0.22 A
GS
DS
D
D
= -0.14 A
GS
GS
D
D
DS
= 0 V
= 0.22 A
= 0.19 A
= 0 V,
DS
= 0 V,
= 0 V
= -0.14 A
= -0.05 A
= 0 V,
= 0 V,
= 5 V
= -5 V
T
T
T
T
J
J
J
J
= 55°C
= 55°C
=125°C
=125°C
o
o
C
o
C
o
C
C
Type
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
-0.65
-0.14
0.65
0.22
Min
-25
25
-0.82
0.85
10.4
0.12
Typ
-2.1
-19
2.6
5.3
3.7
7.3
0.2
9.5
1.3
1.5
25
2.1
11
12
6
7
Max
-100
100
-1.5
-10
1.5
10
10
17
13
FDG6320C Rev. D
-1
1
4
7
5
mV/
mV/
Units
µA
µA
nA
nA
V
V
A
S
pF
o
o
C
C

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