FDG6320C Fairchild Semiconductor, FDG6320C Datasheet - Page 4
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FDG6320C
Manufacturer Part Number
FDG6320C
Description
MOSFET N/P-CH DUAL 25V SC70-6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDG6320C.pdf
(9 pages)
Specifications of FDG6320C
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 Ohm @ 220mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
220mA, 140mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
0.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
9.5pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
4 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
0.2 S, 0.12 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
0.22 A @ N Channel or 0.14 A @ P Channel
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG6320C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Electrical Characteristics: N-Channel
0.5
0.4
0.3
0.2
0.1
0.15
0.05
0
0.2
0.1
0
1.8
1.6
1.4
1.2
0.8
0.6
Figure 3. On-Resistance Variation
0
0.5
1
-50
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
DS
V
= 5V
I = 0.22A
D
V
GS
-25
GS
1
= 4.5V
=4.5V
with Temperature.
1
V
V
DS
GS
T , JUNCTION TEMPERATURE (°C)
, DRAIN-SOURCE VOLTAGE (V)
0
, GATE TO SOURCE VOLTAGE (V)
J
3.5V
2
3.0V
1.5
25
2.7V
T = -55°C
J
50
2.5V
3
2
75
25°C
2.0V
125°C
100
4
2.5
125
5
3
150
20
16
12
4.5
3.5
2.5
0.0001
8
4
0
0.001
5
4
3
2
0.01
1
0
0.4
0.1
Figure 4. On-Resistance Variation with
Figure 6. Body Diode Forward Voltage
0
Figure 2. On-Resistance Variation with
V
GS
= 0V
V
GS
0.2
V
V
SD
0.1
GS
= 2.5V
2
, BODY DIODE FORWARD VOLTAGE (V)
Drain Current and Gate Voltage.
,GATE TO SOURCE VOLTAGE (V)
Gate-to-Source Voltage.
Variation with Source Current
and Temperature.
I , DRAIN CURRENT (A)
D
0.4
2.7V
T = 125°C
J
0.2
3.0V
3
0.6
25°C
T =125°C
A
-55°C
3.5V
25°C
0.8
4.0V
0.3
4
4.5V
I = 0.10A
D
FDG6320C.Rev D
1
5.0V
0.4
1.2
5