FDS8958A Fairchild Semiconductor, FDS8958A Datasheet - Page 6

• Manufacturer Part Number: FDS8958A
• Description: MOSFET N/P-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS8958A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms / 0.052 Ohms
• Forward Transconductance Gfs (max / Min): 25 S, 10 S
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: + 7 A / - 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Dc: N/A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8958ATR; FDS8958A_NL

Typical Characteristics: Q2 (P-Channel)
15
12
30
20
10
9
6
3
0
0
Figure 14. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.6
1
Figure 12. On-Region Characteristics.
0
1
Figure 16. Transfer Characteristics.
-50
V
GS
V
V
DS
GS
I
D
1.5
= -10V
= -5A
= -5V
= -10V
-25
1
-V
-V
DS
GS
T
, DRAIN TO SOURCE VOLTAGE (V)
2
, GATE TO SOURCE VOLTAGE (V)
0
J
Temperature.
-6.0V
, JUNCTION TEMPERATURE (
2
25
2.5
-5.0V
3
50
3
-4.5V
T
75
A
4
= -55
3.5
-4.0V
o
100
o
C
C)
-3.5V
-3.0V
125
5
4
125
o
C
25
o
C
150
4.5
6
Figure 17. Body Diode Forward Voltage Variation
0.25
0.15
0.05
0.0001
0.2
0.1
Figure 13. On-Resistance Variation with
Figure 15. On-Resistance Variation with
0.001
0
0.01
with Source Current and Temperature.
1.8
1.6
1.4
1.2
0.8
100
0.1
10
2
2
1
1
0
0
Drain Current and Gate Voltage.
T
A
= 25
V
V
GS
Gate-to-Source Voltage.
GS
o
0.2
=-4.0V
C
=0V
-V
-V
6
SD
-4.5V
GS
4
, BODY DIODE FORWARD VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
A
0.4
= 125
T
-5.0V
A
-I
D
= 125
, DRAIN CURRENT (A)
o
C
-6.0V
12
0.6
o
C
25
6
-7.0V
o
C
0.8
18
-55
-8.0V
o
C
1
8
FDS8958A Rev F3 (W)
24
I
-10V
D
1.2
= -2.5A
1.4
30
10