FDS8958A Fairchild Semiconductor, FDS8958A Datasheet

MOSFET N/P-CH DUAL 30V 8SOIC

FDS8958A

Manufacturer Part Number
FDS8958A
Description
MOSFET N/P-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDS8958A.pdf (8 pages)

Specifications of FDS8958A

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A, 5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
575pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.028 Ohms / 0.052 Ohms
Forward Transconductance Gfs (max / Min)
25 S, 10 S
Drain-source Breakdown Voltage
+/- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
+ 7 A / - 5 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N/P
Channel Mode
Enhancement
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Dc
N/A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8958ATR
FDS8958A_NL

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Price
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FDS8958A
Dual N & P-Channel PowerTrench
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
©2008 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
V
V
I
P
E
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
Symbol
D
DSS
GSS
D
AS
J
θJA
θJC
, T
Device Marking
STG
FDS8958A
Semiconductor’s
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D1
Pin 1
D
D1
SO-8
D
advanced
D2
- Continuous
- Pulsed
D
FDS8958A
D2
Device
Parameter
S1
S
G1
PowerTrench
S
S2
S
G2
T
G
A
= 25°C unless otherwise noted
® ® ® ®
Reel Size
MOSFET
13”
(Note 1a)
(Note 1a)
(Note 1c)
(Note 3)
(Note 1a)
(Note 1)
Features
•
•
•
•
Q1:
7.0A, 30V
Q2:
-5A, -30V
Fast switching speed
High power and handling capability in a widely
used surface mount package
N-Channel
P-Channel
Q1
±20
1.6
0.9
30
20
54
5
6
7
8
7
2
Tape width
-55 to +150
R
R
R
R
12mm
DS(on)
DS(on)
DS(on)
DS(on)
Q2
Q1
78
40
= 0.028Ω @ V
= 0.040Ω @ V
= 0.052Ω @ V
= 0.080Ω @ V
Q2
±20
-20
1.6
0.9
30
13
-5
2
April 2008
4
3
2
1
GS
GS
GS
GS
2500 units
Quantity
FDS8958A Rev F3(W)
= 10V
= 4.5V
= -10V
= -4.5V
Units
°C/W
°C/W
mJ
°C
W
V
V
A
tm

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FDS8958A Summary of contents

Page 1

... Reel Size 13” April 2008 0.028Ω 10V DS(on 0.040Ω 4.5V DS(on 0.052Ω -10V DS(on 0.080Ω -4.5V DS(on Units ± - 1.6 0 -55 to +150 °C 78 °C/W 40 °C/W Tape width Quantity 12mm 2500 units FDS8958A Rev F3(W) ...

Page 2

... Referenced to 25° -250 µA, Referenced to 25° 125° 125° - 1.0 MHz - 1.0 MHz mV 1.0 MHz - mV/° µ All 100 nA All -100 1 -1 -4.5 mV/° mΩ - 575 pF Q2 528 Q1 145 pF Q2 132 2.1 Ω Q2 6.0 FDS8958A Rev F3 (W) ...

Page 3

... GS = 10V (Q2). GS Type Min Typ Max Units 2 1 -20 Q1 0.75 1 -0.88 -1 135°/W when mounted on a minimum pad. FDS8958A Rev F3 (W) ...

Page 4

... C 0.1 0. 0.001 0.0001 3 0.2 V Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0 4.5V 5.0 6.0V 10. DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V) SD FDS8958A Rev F3 (W) 10 ...

Page 5

... Figure 8. Capacitance Characteristics. 10 100µs 1ms 1 0.01 10 100 Figure 10. Unclamped Inductive Switching 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS Tj=25 Tj=125 0 100 t , TIME IN AVALANCHE (mS) AV Capability Figure SINGLE PULSE R = 135° C/W θ 25° 100 1000 FDS8958A Rev F3 (W) ...

Page 6

... Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. =-4.0V -4.5V -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0.8 1 1.2 1 BODY DIODE FORWARD VOLTAGE (V) SD FDS8958A Rev F3 (W) ...

Page 7

... Figure 23. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 0.01 0 TIME (sec ( 135 °C P(pk) P(pk ( Duty Cycle 100 1000 FDS8958A Rev F3 (W) ...

Page 8

... Fairchild Semiconductor. The datasheet is for reference information only. The Power Franchise ® tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® Definition FDS8958A Rev F3 (W) ® Rev. I34 ...

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