FDS8958A Fairchild Semiconductor, FDS8958A Datasheet - Page 4

• Manufacturer Part Number: FDS8958A
• Description: MOSFET N/P-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS8958A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms / 0.052 Ohms
• Forward Transconductance Gfs (max / Min): 25 S, 10 S
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: + 7 A / - 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Dc: N/A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8958ATR; FDS8958A_NL

Typical Characteristics: Q1 (N-Channel)
20
16
12
20
16
12
8
4
0
8
4
0
1.5
1.6
1.4
1.2
0.8
0.6
Figure 3. On-Resistance Variation with
0
Figure 1. On-Region Characteristics.
1
-50
Figure 5. Transfer Characteristics.
V
DS
V
= 5V
V
GS
GS
I
6.0V
D
-25
= 10.0V
= 10.0V
= 7A
2
V
0.5
GS
V
T
DS
, GATE TO SOURCE VOLTAGE (V)
0
J
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
4.5V
2.5
25
T
4.0V
A
= 125
1
50
o
C
3
75
25
-55
o
3.5V
C
3.0V
1.5
100
o
o
C)
C
3.5
125
150
4
2
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.01
100
0.1
10
2.2
1.8
1.4
0.6
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
2
1
0
0
V
T
Drain Current and Gate Voltage.
GS
A
V
= 25
= 0V
GS
= 3.5V
o
Gate-to-Source Voltage.
0.2
C
V
SD
4.0
4
V
, BODY DIODE FORWARD VOLTAGE (V)
4
GS
T
, GATE TO SOURCE VOLTAGE (V)
A
T
= 125
A
0.4
4.5V
I
= 125
D
, DRAIN CURRENT (A)
o
C
o
8
C
5.0
0.6
6
25
o
C
12
6.0V
0.8
-55
8
FDS8958A Rev F3 (W)
10.0V
o
C
16
I
D
1
= 3.5A
1.2
20
10