NDS8858H Fairchild Semiconductor, NDS8858H Datasheet - Page 7
![MOSFET N+P 30V 4.8A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
NDS8858H
Manufacturer Part Number
NDS8858H
Description
MOSFET N+P 30V 4.8A 8-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDS8858H.pdf
(9 pages)
Specifications of NDS8858H
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.3A, 4.8A
Vgs(th) (max) @ Id
2.8V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
720pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Common Quad Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.035 Ohms
Drain-source Breakdown Voltage
+/- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.3 A, - 4.8 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS8858HTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDS8858H
Manufacturer:
Fairchild Semiconductor
Quantity:
25 602
Part Number:
NDS8858H
Manufacturer:
NS/国半
Quantity:
20 000
Typical Electrical and Thermal Characteristics
Figure 23. SO-8 Single Device DC Power Dissipation versus
Figure 19. N-Channel Transconductance Variation with
2.5
1.5
0.5
Figure 21. N-Channel Body Diode Forward Voltage
0.001
2
1
2 0
1 6
1 2
0.01
8
4
0
0.1
0
2 0
1 0
0
5
1
Copper Mounting Pad Area.
1c
0.2
1 b
Drain Current and Temperature.
Variation with Current and Temperature
V
V
T = 125°C
DS
GS
J
= 10V
=0V
0.2
0.4
2oz COPPER MOUNTING PAD AREA (in
V
5
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
0.6
D
0.4
, DRAIN CURRENT (A)
1 0
25°C
0.8
0.6
1 5
-55°C
T = -55°C
J
1
4.5"x5" FR-4 Board
T
Still Air
A
= 2 5 C
2
0.8
25°C
)
o
2 0
1.2
125°C
.
1a
1.4
1
2 5
0.001
Figure 22. P-Channel Body Diode Forward
0.01
Figure 20. P-Channel Transconductance Variation
0.1
1 2
2 0
1 0
9
6
3
0
5
1
0
0
Voltage Variation with Current and
Temperature
V
T = 125°C
DS
with Drain Current and Temperature.
V
J
GS
= -10V
= 0V
-V
0.4
-4
SD
, BODY DIODE FORWARD VOLTAGE (V)
.
25°C
I
D
, DRAIN CURRENT (A)
0.8
-8
-55°C
T
J
1.2
= -55°C
-12
25°C
1.6
125°C
-16
NDS8858H Rev. C
2
-20