NDS8858H Fairchild Semiconductor, NDS8858H Datasheet - Page 5

• Manufacturer Part Number: NDS8858H
• Description: MOSFET N+P 30V 4.8A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8858H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 4.8A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 720pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Common Quad Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.3 A, - 4.8 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS8858HTR

Typical Electrical Characteristics
1.75
1.25
0.75
2 5
2 0
1 5
1 0
1.5
0.5
Figure 7. N-Channel On-Resistance Variation
5
0
1.2
1.1
0.9
0.8
0.7
0.6
Figure 11. N-Channel Gate Threshold Variation
2
1
1
1
0
-50
V
V
DS
G S
Figure 9. N-Channel Transfer
with Drain Current and Temperature.
with Temperature.
= 10V
= 10V
-25
2
5
Characteristics.
V
GS
0
T , JUNCTION TEMPERATURE (°C)
J
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
10
25
3
T = -55°C
J
50
15
4
75
T = 125°C
25°C
J
I
V
100
D
DS
20
125°C
= 250µA
= V
25°C
5
-55°C
GS
125
25
150
6
-20
-15
-10
1.5
0.5
-5
0
1.2
1.1
0.9
0.8
0.7
0.6
Figure 12. P-Channel Gate Threshold Variation
2
1
-1
1
Figure 8. P-Channel On-Resistance Variation
0
-50
V
V
DS
Figure 10. P-Channel Transfer
G S
with Temperature.
= -10V
with Drain Current and Temperature
-25
= -10V
-2
-4
Characteristics.
V
GS
0
T , JUNCTION TEMPERATURE (°C)
J
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
2 5
-8
-3
T
J
5 0
= -55°C
T = 125°C
J
-12
-4
7 5
I
25°C
V
100
D
DS
-16
= -250µA
125°C
-5
= V
-55°C
25°C
NDS8858H Rev. C
125
G S
.
-20
150
-6