NDS8858H Fairchild Semiconductor, NDS8858H Datasheet

MOSFET N+P 30V 4.8A 8-SOIC

NDS8858H

Manufacturer Part Number
NDS8858H
Description
MOSFET N+P 30V 4.8A 8-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS8858H

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.3A, 4.8A
Vgs(th) (max) @ Id
2.8V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
720pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Common Quad Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.035 Ohms
Drain-source Breakdown Voltage
+/- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.3 A, - 4.8 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS8858HTR

Available stocks

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Manufacturer
Quantity
Price
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NDS8858H
Manufacturer:
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Part Number:
NDS8858H
Manufacturer:
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Quantity:
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Part Number:
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Quantity:
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________________________________________________________________________________
Absolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1997 Fairchild Semiconductor Corporation
D
These Complementary MOSFET half bridge devices are
produced using Fairchild's proprietary, high cell density,
DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage half bridge
applications or CMOS applications when both gates are
connected together.
General Description
J
DSS
GSS
D
NDS8858H
Complementary MOSFET Half Bridge
,T
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
(Single Device)
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
(Single Device)
Thermal Resistance, Junction-to-Case
(Single Device)
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1a &2)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1a)
(Note 1a)
Features
N-Channel 6.3A, 30V, R
P-Channel -4.8A, -30V, R
High density cell design or extremely low R
High power and current handling capability in a widely used
surface mount package.
Matched pair for equal input capacitance and power capability
.
N-Channel
N - G a t e
P - G a t e
6.3
30
20
20
-55 to 150
2.5
1.2
50
25
1
DS(ON)
DS(ON)
V +
=0.035
V -
=0.065
P-Channel
-4.8
-30
-20
20
@ V
@ V
DS(ON)
GS
V o u t
V o u t
GS
V o u t
V o u t
=10V.
=-10V.
.
July 1996
NDS8858H Rev. C
Units
°C/W
°C/W
W
°C
V
V
A

Related parts for NDS8858H

NDS8858H Summary of contents

Page 1

... Matched pair for equal input capacitance and power capability . 25°C unless otherwise noted A N-Channel 30 20 6.3 (Note 1a &2) 20 (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1a) July 1996 =0.035 @ V =10V. DS(ON) GS =0.065 @ V =-10V. DS(ON DS(ON P-Channel Units -30 V - 2.5 W 1.2 1 -55 to 150 °C 50 °C/W 25 °C/W NDS8858H Rev. C ...

Page 2

... V 0.7 1.2 2.2 P-Ch -1 -1.6 -2.8 -0.7 -1.2 -2.2 N-Ch 0.033 0.035 0.046 0.063 0.046 0.05 P-Ch 0.052 0.065 0.075 0.13 0.085 0.1 N- P-Ch -20 N- P-Ch 7 N-Ch 720 pF P-Ch 690 N-Ch 370 pF P-Ch 430 N-Ch 250 pF P-Ch 160 NDS8858H Rev. C ...

Page 3

... N-Channel 2 /dt = 100 A/µ P-Channel -2 /dt = 100 A/µ Type Min Typ Max Units N-Ch 2.1 P-Ch 3.2 N-Ch 5.2 P-Ch 5.2 N-Ch 2 P-Ch -2 N-Ch 0.9 1.2 P-Ch -0.85 -1.2 N-Ch 100 P-Ch 100 is guaranteed NDS8858H Rev ...

Page 4

... Figure 4. P-Channel On-Resistance Variation 1.6 1.4 1.2 1 0.8 0 -50 Figure 6. P-Channel On-Resistance Variation = -10V -6.0 -5.0 -4.5 -4.0 -3.5 -3 DRAIN-SOURCE VOLTAGE ( -3. 4.0 -4.5 -5.0 -6 -12 - DRAIN CURRENT (A) D with Gate Voltage and Drain Current -4. -10V GS - JUNCTION TEMPERATURE (°C) J with Temperature. -4 -10 - NDS8858H Rev. C ...

Page 5

... Figure 12. P-Channel Gate Threshold Variation = -10V 125°C J 25°C -55° -12 - DRAIN CURRENT (A) D with Drain Current and Temperature T = -55°C = -10V J 125°C 25° GATE TO SOURCE VOLTAGE (V) GS Figure 10. P-Channel Transfer Characteristics -250µ 100 T , JUNCTION TEMPERATURE (°C) J with Temperature. - 125 150 NDS8858H Rev. C ...

Page 6

... C rss 100 0.1 0.2 Figure 16. P-Channel Capacitance -4.8A D 10V 20V Figure 18. P-Channel Gate Charge Characteristics -250µ JUNCTION TEMPERATURE (°C) J Variation with Temperature MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS Characteristics -5V DS -20V -10V GATE CHARGE (nC iss C oss C rss 30 25 NDS8858H Rev. C ...

Page 7

... Figure 22. P-Channel Body Diode Forward . Voltage Variation with Current and Temperature 1a 4.5"x5" FR-4 Board Still Air 0 -55° -10V 25°C 125° -12 - DRAIN CURRENT ( 25°C -55°C 0.4 0.8 1.2 1 BODY DIODE FORWARD VOLTAGE ( -20 2 NDS8858H Rev. C ...

Page 8

... FR-4 Board Still Air 0.2 0.4 0.6 0.8 2 2oz COPPER MOUNTING PAD AREA ( -10V GS SINGLE PULSE = See Note 25° DRAIN-SOURCE VOLTAGE (V) DS Figure 27. P-Ch Maximum Safe Operating . Area R ( See Note 1c JA P(pk ( Duty Cycle 100 300 NDS8858H Rev. C ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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