ISL9V5045S3ST Fairchild Semiconductor, ISL9V5045S3ST Datasheet - Page 4

IGBT N-CH IGN 480V D2PAK

ISL9V5045S3ST

Manufacturer Part Number
ISL9V5045S3ST
Description
IGBT N-CH IGN 480V D2PAK
Manufacturer
Fairchild Semiconductor
Series
EcoSPARK™r
Datasheet

Specifications of ISL9V5045S3ST

Voltage - Collector Emitter Breakdown (max)
480V
Vce(on) (max) @ Vge, Ic
1.6V @ 4V, 10A
Current - Collector (ic) (max)
51A
Power - Max
300W
Input Type
Logic
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Electronic Ignition Drivers
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
ISL9V5045S3STTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ISL9V5045S3ST
Manufacturer:
FAIRCHILD
Quantity:
8 000
ISL9V5045S3ST Rev. A1
Typical Characteristics
Figure 3.
Figure 5.
Figure 7.
50
40
30
20
10
1.10
1.05
1.00
0.95
0.90
0.85
50
40
30
20
10
0
0
0
0
-50
V
V
V
V
V
V
V
V
V
V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
Collector Current vs Collector to Emitter
Collector to Emitter On-State Voltage vs
Collector to Emitter On-State Voltage vs
-25
= 8.0V
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
V
V
CE
CE
Junction Temperature
, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER VOLTAGE (V)
1.0
1.0
0
T
Collector Current
On-State Voltage
J
, JUNCTION TEMPERATURE (°C)
25
V
GE
V
= 4.5V
GE
50
V
2.0
2.0
= 5.0V
GE
V
= 8.0V
75
GE
= 3.7V
(Continued)
100
3.0
3.0
125
V
GE
T
T
J
J
I
CE
= 4.0V
= - 40°C
= 175°C
150
= 6A
175
4.0
4.0
4
Figure 6.
Figure 4.
1.25
1.20
1.15
1.10
1.05
1.00
50
40
30
20
10
50
40
30
20
10
0
0
1.0
0
-50
DUTY CYCLE < 0.5%, V
Figure 8.
V
V
V
V
V
GE
GE
GE
GE
GE
PULSE DURATION = 250µs
Collector to Emitter On-State Voltage vs
Collector Current vs Collector to Emitter
-25
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
1.5
V
CE
Junction Temperature
V
T
, COLLECTOR TO EMITTER VOLTAGE (V)
V
GE
J
GE
1.0
0
T
= 25°C
On-State Voltage
J
= 4.5V
2.0
, GATE TO EMITTER VOLTAGE (V)
V
, JUNCTION TEMPERATURE (°C)
Transfer Characteristics
GE
T
25
J
= 5.0V
V
GE
= 175°C
2.5
= 8.0V
CE
50
= 5V
V
2.0
GE
= 3.7V
75
3.0
T
100
J
= -40°C
3.5
www.fairchildsemi.com
V
GE
3.0
125
= 4.0V
T
I
CE
J
4.0
= 25°C
150
= 10A
175
4.0
4.5

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