ISL9V5045S3ST Fairchild Semiconductor, ISL9V5045S3ST Datasheet
ISL9V5045S3ST
Specifications of ISL9V5045S3ST
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ISL9V5045S3ST Summary of contents
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... ISL9V5045S3ST Rev. A1 General Description o C The ISL9V5045S3ST is next generation ignition IGBT that offer outstanding SCIS capability in the industry standard D2-Pak (TO-263) plastic package. This device is intended for use in automotive ignition circuits, specifically as a coil drivers. Internal diodes provide voltage clamping without the need for external components. ...
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... Emitter to Collector Leakage Current ECS R Series Gate Resistance 1 R Gate to Emitter Resistance 2 On State Characteristics V Collector to Emitter Saturation Voltage CE(SAT) V Collector to Emitter Saturation Voltage CE(SAT) ISL9V5045S3ST Rev 25°C unless otherwise noted A Parameter = 39.2A 650 µHy SCIS = 31.1A 650 µHy SCIS = 25°C, See Fig 110° ...
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... 25° 150° SCIS Curves valid for V Voltages of <480V clamp 100 t , TIME IN CLAMP (µS) CLP Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp ISL9V5045S3ST Rev 10A 12V 5V, See Fig 1.0mA 25° 150°C CE GE, C See Fig 10A 14V 1Ω, ...
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... COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 5. Collector Current vs Collector to Emitter On-State Voltage 1.0 2 COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 7. Collector to Emitter On-State Voltage vs Collector Current ISL9V5045S3ST Rev. A1 (Continued) 1. 1. 4.0V GE 1.15 1.10 1.05 1.00 100 125 150 175 -50 Figure 4. Collector to Emitter On-State Voltage ...
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... Figure 11. Leakage Current vs Junction Temperature 3000 2500 C 2000 IES 1500 1000 C RES 500 C OES COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 13. Capacitance vs Collector to Emitter Voltage ISL9V5045S3ST Rev. A1 (Continued) 2 4.0V GE 1.8 1.6 1.4 1.2 1.0 0.8 -50 -25 125 150 175 Figure 10 6.5A 24V 18 16 ...
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... SINGLE PULSE - Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case Test Circuits and Waveforms R G PULSE DUT GEN G Figure 17. Inductive Switching Test Circuit ISL9V5045S3ST Rev. A1 (Continued 40° 175°C J 100 R , SERIES GATE RESISTANCE (Ω Series Gate Resistance - RECTANGULAR PULSE DURATION (s) ...
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... Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK Figure 19. Energy Test Circuit ISL9V5045S3ST Rev. A1 (Continued DUT 0.01Ω Figure 20 CES Energy Waveforms www.fairchildsemi.com ...
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... ISL9V5045S3S / ISL9V5045S3 template thermal_model th tl thermal_c th ctherm.ctherm1 82e-4 ctherm.ctherm2 105e-4 ctherm.ctherm3 12e-3 ctherm.ctherm4 33e-3 ctherm.ctherm5 55e-3 ctherm.ctherm6 170e-3 rtherm.rtherm1 3e-3 rtherm.rtherm2 20e-3 rtherm.rtherm3 50e-3 rtherm.rtherm4 60e-3 rtherm.rtherm5 100e-3 rtherm.rtherm6 127e-3 } ISL9V5045S3ST Rev. A1 JUNCTION th RTHERM1 6 RTHERM2 5 RTHERM3 4 RTHERM4 3 RTHERM5 2 RTHERM6 tl CASE 8 CTHERM1 ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ FlashWriter Auto-SPM™ FPS™ Build it Now™ F-PFS™ CorePLUS™ FRFET CorePOWER™ ...