ISL9V5045S3ST Fairchild Semiconductor, ISL9V5045S3ST Datasheet - Page 2

IGBT N-CH IGN 480V D2PAK

ISL9V5045S3ST

Manufacturer Part Number
ISL9V5045S3ST
Description
IGBT N-CH IGN 480V D2PAK
Manufacturer
Fairchild Semiconductor
Series
EcoSPARK™r
Datasheet

Specifications of ISL9V5045S3ST

Voltage - Collector Emitter Breakdown (max)
480V
Vce(on) (max) @ Vge, Ic
1.6V @ 4V, 10A
Current - Collector (ic) (max)
51A
Power - Max
300W
Input Type
Logic
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Electronic Ignition Drivers
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
ISL9V5045S3STTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ISL9V5045S3ST
Manufacturer:
FAIRCHILD
Quantity:
8 000
ISL9V5045S3ST Rev. A1
Device Maximum Ratings
Package Marking and Ordering Information
Electrical Characteristics
Off State Characteristics
On State Characteristics
V
V
Symbol
E
Symbol
BV
BV
BV
BV
E
BV
CE(SAT)
CE(SAT)
BV
Device Marking
SCIS150
I
I
V
T
SCIS25
I
ESD
CER
ECS
T
R
R
I
C110
P
C25
GEM
T
STG
T
CER
GES
CES
ECS
pkg
CER
ECS
1
2
D
J
L
V5045S
V5045S
V5045S
Collector to Emitter Breakdown Voltage I
Collector to Emitter Breakdown Voltage I
Emitter to Collector Breakdown Voltage
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
Series Gate Resistance
Gate to Emitter Resistance
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
Collector to Emitter Breakdown Voltage (I
Emitter to Collector Voltage - Reverse Battery Condition (I
At Starting T
At Starting T
Collector Current Continuous, At T
Collector Current Continuous, At T
Gate to Emitter Voltage Continuous
Power Dissipation Total T
Power Dissipation Derating T
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
J
J
Parameter
ISL9V5045S3ST
= 25°C, I
= 150°C, I
ISL9V5045S3S
ISL9V5045S3
Device
SCIS
SCIS
C
T
T
= 25°C
A
A
= 39.2A, L = 650 µHy
= 25°C unless otherwise noted
= 31.1A, L = 650 µHy
C
= 25°C unless otherwise noted
> 25°C
Parameter
C
C
= 25°C, See Fig 9
= 110°C, See Fig 9
R
T
R
T
I
T
I
V
R
Fig. 11
V
Fig. 11
I
V
I
V
TO-263AB
TO-262AA
TO-263AB
C
C
C
GES
C
C
Package
C
J
J
C
GE
GE
G
G
CER
G
EC
= 2mA, V
= 10mA, V
= -75mA, V
= 10A,
= 15A,
= 1 mA)
= -40 to 150°C
= -40 to 150°C
= 25°C
= 1KΩ, See Fig. 15
= 0, See Fig. 15
= 1KΩ, See
= 24V, See
= 4.0V
= 4.5V
2
= ± 2mA
Test Conditions
= 320V,
GE
GE
GE
= 0,
T
See Fig. 4
T
= 0,
T
T
T
T
= 0V,
C
C
C
C
C
C
C
= 25°C,
= 150°C
= 10 mA)
= 25°C
= 150°C
= 25°C
= 150°C
Reel Size
330mm
Tube
Tube
10K
Min
420
445
±12
30
-
-
-
-
-
-
-
Tape Width
1.25
1.47
Typ
450
475
±14
100
24mm
N/A
N/A
-
-
-
-
-
-
-40 to 175
-40 to 175
Ratings
480
500
315
±10
300
300
260
24
51
43
2
4
www.fairchildsemi.com
Max
30K
480
505
1.60
1.80
25
40
1
1
-
-
-
Quantity
800
50
50
Units
Units
W/°C
mA
mA
mA
µA
mJ
mJ
°C
°C
°C
°C
kV
V
V
V
V
V
V
W
V
V
A
A
V

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