HGTG18N120BND Fairchild Semiconductor, HGTG18N120BND Datasheet - Page 6

• Manufacturer Part Number: HGTG18N120BND
• Description: IGBT NPT N-CHAN 1200V 54A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG18N120BND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 18A
• Current - Collector (ic) (max): 54A
• Power - Max: 390W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 54 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 390 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 54 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 54A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 54A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
100
6
5
4
3
2
1
0
10
1
0
0
10
10
FREQUENCY = 1MHz
10
C
RES
-1
-2
0
10
-5
VOLTAGE
VOLTAGE DROP
0.05
0.02
0.01
0.5
0.2
0.1
V
150
5
CE
1
, COLLECTOR TO EMITTER VOLTAGE (V)
o
C
C
IES
SINGLE PULSE
V
F
, FORWARD VOLTAGE (V)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
2
C
OES
10
-4
25
15
o
3
C
Unless Otherwise Specified (Continued)
20
4
t
1
, RECTANGULAR PULSE DURATION (s)
HGTG18N120BND
10
-3
25
DUTY FACTOR, D = t
PEAK T
5
J
= (P
D
X Z
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
θJC
70
60
50
40
30
20
10
30
25
20
15
10
1
5
0
1
/ t
X R
10
0
2
T
DUTY CYCLE < 0.5%, T
PULSE DURATION = 250µs
-2
C
θJC
= 25
) + T
t
V
o
rr
t
t
CE
C, dI
a
b
C
, COLLECTOR TO EMITTER VOLTAGE (V)
1
2
P
EC
D
I
F
/dt = 200A/µs
, FORWARD CURRENT (A)
2
V
C
GE
10
= 110
-1
= 15V OR 12V
5
o
C
t
1
3
t
2
HGTG18N120BND Rev.C
V
10
GE
4
= 10V
10
0
20
5