HGTG18N120BND Fairchild Semiconductor, HGTG18N120BND Datasheet - Page 4

• Manufacturer Part Number: HGTG18N120BND
• Description: IGBT NPT N-CHAN 1200V 54A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG18N120BND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 18A
• Current - Collector (ic) (max): 54A
• Power - Max: 390W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 54 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 390 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 54 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 54A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 54A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
100
12
10
50
10
8
6
4
2
0
80
60
40
20
1
0
5
5
0
P
f
f
T
R
R
MAX1
MAX2
C
J
ØJC
G
= 150
= CONDUCTION DISSIPATION
= 3Ω, L = 1mH, V
(DUTY FACTOR = 50%)
= 0.32
EMITTER CURRENT
T
10
EMITTER CURRENT
= 0.05 / (t
= (P
I
I
V
CE
CE
C
o
CE
C, R
= -55
T
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
D
2
, COLLECTOR TO EMITTER VOLTAGE (V)
J
o
- P
= 150
C/W, SEE NOTES
G
o
C
15
d(OFF)I
C
= 3Ω, L = 1mH, V
) / (E
10
o
C, V
CE
ON
T
C
+ t
4
GE
= 960V
20
+ E
= 75
d(ON)I
T
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
= 12V, V
J
OFF
= 25
o
T
C, V
C
T
)
)
= 25
C
CE
o
25
C, V
GE
= 150
110
110
GE
6
= 960V
75
75
T
o
= 15V, IDEAL DIODE
C
C
GE
o
o
= 15V
o
o
20
C
C
C
C 12V
o
Unless Otherwise Specified (Continued)
C
= 12V, V
30
V
15V
15V
12V
GE
8
GE
GE
35
30
= 15V
HGTG18N120BND
= 12V
10
40
40
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
100
30
25
20
15
10
80
60
40
20
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
5
0
12
0
5
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
R
G
T
J
= 3Ω, L = 1mH, V
V
= 150
CE
V
EMITTER CURRENT
V
10
I
GE
CE
CE
= 960V, R
T
o
13
, GATE TO EMITTER VOLTAGE (V)
C
2
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER VOLTAGE (V)
C, V
= -55
15
GE
o
G
C
= 12V OR 15V
= 3Ω, T
CE
4
14
= 960V
20
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
J
= 125
T
J
= 25
25
o
t
I
SC
SC
6
C
T
o
C
15
C, V
= 25
30
GE
HGTG18N120BND Rev.C
o
C
= 12V OR 15V
T
C
8
= 150
GE
35
16
= 15V
300
250
200
150
100
50
o
C
10
40