HGTG18N120BND Fairchild Semiconductor, HGTG18N120BND Datasheet - Page 2

• Manufacturer Part Number: HGTG18N120BND
• Description: IGBT NPT N-CHAN 1200V 54A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG18N120BND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 18A
• Current - Collector (ic) (max): 54A
• Power - Max: 390W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 54 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 390 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 54 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 54A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 54A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
1. Pulse width limited by maximum junction temperature.
2. V
At T
At T
CE(PK)
C
C
= 25
= 110
o
= 960V, T
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
J
= 125
C
C
= 25
o
> 25
C, R
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
o
G =
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
C
T
= 25
C
3Ω.
= 25
GE
GE
o
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
o
C, Unless Otherwise Specified
SYMBOL
V
V
Q
t
BV
BV
t
d(OFF)I
CE(SAT)
SSOA
V
E
GE(TH)
d(ON)I
I
I
E
G(ON)
CES
GES
GEP
OFF
t
t
ON
CES
ECS
rI
fI
HGTG18N120BND
I
I
V
I
V
I
V
T
L = 200µH, V
I
I
V
IGBT and Diode at T
I
V
V
R
L = 1mH
Test Circuit (Figure 20)
C
C
C
C
C
C
CE
J
CE
GE
GE
CE
CE
GE
G
= 250µA, V
= 10mA, V
= 18A,
= 150µA, V
= 18A, V
= 18A,
= 150
= 3Ω
= 18A
= 1200V
= 600V
= 960V
= 15V
= ±20V
= 15V
o
TEST CONDITIONS
C, R
CE
GE
CE(PK)
GE
CE
G
= 600V
= 3Ω, V
= 0V
= 0V
= V
= 1200V
J
GE
T
T
T
T
T
V
V
J
= 25
, T
C
C
C
C
C
GE
GE
GE
C110
GEM
= 25
= 125
= 150
= 25
= 150
GES
CES
STG
C25
CM
SC
SC
= 15V
= 20V
o
= 15V,
C
D
L
o
o
C
o
o
C
o
C
C
C
HGTG18N120BND
100A at 1200V
-55 to 150
1200
MIN
100
6.0
15
1200
3.12
160
±20
±30
390
260
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
54
26
15
8
TYP
2.45
10.5
300
165
220
170
3.8
7.0
1.9
1.8
23
17
90
-
-
-
-
-
-
MAX
±250
HGTG18N120BND Rev. C
250
200
250
200
140
2.7
4.2
2.4
2.2
28
22
4
-
-
-
-
-
-
UNITS
W/
o
o
W
µs
µs
V
A
A
A
V
V
C
C
UNITS
o
C
mA
nC
nC
mJ
mJ
µA
µA
nA
ns
ns
ns
ns
V
V
V
V
V
A
V