FGA60N60UFDTU Fairchild Semiconductor, FGA60N60UFDTU Datasheet - Page 5

• Manufacturer Part Number: FGA60N60UFDTU
• Description: IGBT 600V 120A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA60N60UFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 60A
• Current - Collector (ic) (max): 120A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA60N60UFD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
6000
4000
2000
0.01
500
100
0.1
20
16
12
10
8
4
0
0
1
0
1
1
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
3
Collector-Emitter Voltage, V
Gate-Emitter Voltage, V
I
C
C
C
C
= 30A
res
oes
ies
10
6
60A
9
Common Emitter
V
T
Common Emitter
T
C
GE
100
12
C
120A
10
= 25
GE
= 25
= 0V, f = 1MHz
CE
[V]
o
CE
[V]
o
C
100
10 ms
GE
C
1ms
DC
[V]
15
µ
10
s
µ
s
1000
18
30
Figure 12. Turn off Switching SOA Characteristics
5
Figure 10. Gate charge Characteristics
Figure 8. Saturation Voltage vs. V
20
16
12
300
100
15
12
8
4
0
10
9
6
3
0
1
0
0
1
Common Emitter
T
Safe Operating Area
V
C
GE
= 25
= 15V, T
3
Collector-Emitter Voltage, V
o
Gate-Emitter Voltage, V
C
50
I
C
60A
C
Gate Charge, Q
6
= 125
10
= 30A
V
CC
o
= 100V
C
100
9
g
Common Emitter
T
12
[nC]
100
C
GE
= 125
120A
150
[V]
GE
CE
200V
o
C
15
[V]
300V
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1000
18
200