FGA60N60UFDTU Fairchild Semiconductor, FGA60N60UFDTU Datasheet - Page 4

• Manufacturer Part Number: FGA60N60UFDTU
• Description: IGBT 600V 120A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA60N60UFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 60A
• Current - Collector (ic) (max): 120A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA60N60UFD Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
180
150
120
180
150
120
4.0
3.5
3.0
2.5
2.0
1.5
1.0
90
60
30
90
60
30
0
0
25
0
0
Common Emitter
V
T
T
T
Temperature at Variant Current Level
C
C
Common Emitter
V
C
GE
Collector-EmitterCase Temperature, T
Characteristics
GE
= 25
= 125
= 25
= 15V
= 15V
Collector-Emitter Voltage, V
o
o
Collector-Emitter Voltage, V
C
C
o
1
C
50
2
20V
2
12V
75
4
15V
I
C
3
= 30A
120A
60A
100
CE
CE
V
6
GE
[V]
4
[V]
10V
= 8V
C
[
o
C]
125
5
8
4
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
180
150
120
180
150
120
90
60
30
90
60
30
20
16
12
0
0
8
4
0
0
0
0
T
C
Common Emitter
V
T
T
CE
C
C
= 125
= 25
= 125
= 20V
Collector-Emitter Voltage, V
3
o
o
C
C
o
1
Gate-Emitter Voltage, V
C
Gate-Emitter Voltage,V
2
I
C
20V
= 30A
6
60A
2
12V
4
9
15V
3
Common Emitter
T
120A
12
C
GE
GE
= -40
CE
6
V
[V]
[V]
GE
[V]
o
4
C
10V
GE
15
= 8V
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