FGA60N60UFDTU Fairchild Semiconductor, FGA60N60UFDTU Datasheet - Page 2

• Manufacturer Part Number: FGA60N60UFDTU
• Description: IGBT 600V 120A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA60N60UFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 60A
• Current - Collector (ic) (max): 120A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA60N60UFD Rev. A
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
Off Characteristics
BV
∆BV
∆T
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Q
Q
Q
Device Marking
Symbol
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
GE(th)
CE(sat)
on
off
ts
on
off
ts
ies
oes
res
g
ge
gc
FGA60N60UFD
J
CES
CES
Collector to Emitter Breakdown Voltage V
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
FGA60N60UFDTU
Parameter
Device
Package
TO-3PN
V
V
V
I
I
I
T
V
f = 1MHz
V
R
Inductive Load, T
V
R
Inductive Load, T
V
V
C
C
C
C
GE
GE
CE
GE
CE
CC
CC
CE
GE
G
G
= 60A
= 60A
= 250µA, V
= 125
= 5Ω, V
= 5Ω, V
= 30V
= V
= 400V, I
= 0V, I
= 0V, I
= V
= 400V, I
= 400V, I
= 15V
Test Conditions
T
C
CES
GES
,
,
o
= 25°C unless otherwise noted
V
V
C
,
GE
GE
2
C
C
V
GE
GE
, V
, V
GE
= 250µA
= 250µA
C
C
C
CE
= 15V
= 15V,
= 15V,
= 15V,
GE
CE
= 60A,
= 60A,
= 60A,
= 0V,
Packaging
= V
C
C
= 0V
= 0V
= 25
= 125
GE
Type
Tube
o
C
o
C
Qty per Tube
Min.
600
4.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30ea
Typ.
2855
0.67
1.81
0.81
2.62
1.92
1.23
3.15
325
130
141
188
110
5.0
1.9
2.1
23
58
40
22
61
63
21
97
-
-
-
Max.
±400
250
6.5
2.4
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max Qty
per Box
www.fairchildsemi.com
-
Units
V/
µA
nA
mJ
mJ
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
o
C