HGTG10N120BND Fairchild Semiconductor, HGTG10N120BND Datasheet - Page 7

• Manufacturer Part Number: HGTG10N120BND
• Description: IGBT N-CH NPT 1200V 35A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG10N120BND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 35A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 17 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 35A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 298W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Test Circuit and Waveforms
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
2. When devices are removed by hand from their carriers,
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
5. Gate Voltage Rating - Never exceed the gate-voltage
6. Gate Termination - The gates of these devices are
7. Gate Protection - These devices do not have an internal
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
circuits with power on.
rating of V
permanent damage to the oxide layer in the gate region.
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
R
G
GEM
= 10Ω
. Exceeding the rated V
L = 2mH
HGTG10N120BND
+
-
GE
can result in
V
DD
= 960V
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.
f
allowable dissipation (P
The sum of device switching and conduction losses must not
exceed P
conduction losses (P
P
E
shown in Figure 21. E
power loss (I
integral of the instantaneous power loss (I
turn-off. All tail losses are included in the calculation for
E
MAX2
V
V
MAX1
I
CE
C
ON
OFF
GE
CE
= (V
and E
; i.e., the collector current equals zero (I
is defined by f
is defined by f
CE
FIGURE 21. SWITCHING TEST WAVEFORMS
D
. A 50% duty factor was used (Figure 3) and the
OFF
x I
CE
CE
d(OFF)I
t
MAX1
d(OFF)I
are defined in the switching waveforms
x V
)/2.
90%
10%
CE
MAX2
MAX1
or f
C
and t
ON
) during turn-on and E
D
) are approximated by
t
fI
) is defined by P
MAX2
is the integral of the instantaneous
= (P
d(ON)I
= 0.05/(t
E
OFF
; whichever is smaller at each
D
90%
CE
- P
are defined in Figure 21.
) plots are possible using
C
d(OFF)I
)/(E
E
ON
D
OFF
10%
= (T
t
CE
d(ON)I
+ t
HGTG10N120BND Rev. B
+ E
OFF
d(ON)I
t
CE
JM
x V
rI
JM
ON
CE
- T
= 0).
is the
. t
). The
C
).
) during
d(OFF)I
)/R
θJC
.