HGTG10N120BND Fairchild Semiconductor, HGTG10N120BND Datasheet - Page 4

• Manufacturer Part Number: HGTG10N120BND
• Description: IGBT N-CH NPT 1200V 35A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG10N120BND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 35A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 17 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 35A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 298W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
100
50
10
50
40
30
20
10
5
4
3
2
1
0
1
0
0
2
T
0
f
f
P
(DUTY FACTOR = 50%)
R
MAX1
MAX2
J
R
C
T
ØJC
DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs
= 150
C
G
= CONDUCTION DISSIPATION
= 10Ω, L = 2mH, V
= 75
EMITTER CURRENT
EMITTER CURRENT
= 0.42
T
I
I
= 0.05 / (t
= (P
V
CE
CE
C
o
CE
C, R
o
= -55
T
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
C, V
D
, COLLECTOR TO EMITTER VOLTAGE (V)
J
2
o
- P
= 150
G
C/W, SEE NOTES
5
GE
o
= 10Ω, L = 2mH, V
C
C
d(OFF)I
) / (E
= 15V, IDEAL DIODE
o
C, V
ON
CE
5
GE
4
+ t
GE
+ E
T
= 960V
d(ON)I
J
T
= 12V, V
C
= 25
= 12V
OFF
10
= 25
T
)
C
)
o
CE
C, V
o
= 150
GE
110
110
C
6
75
75
T
= 960V
GE
= 15V
C
o
o
o
o
o
C
C 12V
C
C 12V
10
C
= 12V, V
Unless Otherwise Specified (Continued)
V
15V
15V
15
GE
8
GE
= 15V
10
20
20
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
25
20
15
10
50
40
30
20
10
2.0
1.5
1.0
0.5
5
0
0
12
0
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
0
R
G
T
J
V
= 10Ω, L = 2mH, V
EMITTER CURRENT
V
V
I
= 150
GE
T
CE
CE
CE
C
, GATE TO EMITTER VOLTAGE (V)
2
= -55
, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
13
= 840V, R
o
C, V
5
o
C
GE
t
SC
G
= 12V OR 15V
= 10Ω, T
4
CE
14
T
DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs
= 960V
J
10
= 25
J
= 125
T
C
o
6
C, V
= 25
T
15
o
C
C
GE
o
= 150
C
HGTG10N120BND Rev. B
= 12V OR 15V
I
SC
15
o
C
8
GE
16
250
200
150
100
50
= 15V
20
10