HGTG12N60C3D Fairchild Semiconductor, HGTG12N60C3D Datasheet - Page 6

• Manufacturer Part Number: HGTG12N60C3D
• Description: IGBT UFS N-CHAN 600V 24A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG12N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 24A
• Power - Max: 104W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 24A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 104W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
Test Circuit and Waveform
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
50
40
30
20
10
0
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
0
R
G
10
10
10
VOLTAGE DROP
= 25Ω
0.5
-1
-2
0
10
0.02
0.01
0.05
0.5
0.2
0.1
-5
V
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
EC
1.0
150
, FORWARD VOLTAGE (V)
SINGLE PULSE
100
o
C
L = 100µH
o
RHRP1560
C
1.5
10
-4
+
-
2.0
25
(Continued)
o
C
V
DD
2.5
10
= 480V
-3
t
1
, RECTANGULAR PULSE DURATION (s)
3.0
10
-2
V
V
I
CE
GE
CE
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
40
30
20
10
0
0
T
FIGURE 21. SWITCHING TEST WAVEFORMS
C
= 25
10
t
DUTY FACTOR, D = t
o
d(OFF)I
PEAK T
C, dI
-1
90%
10%
EC
5
I
EC
J
/dt = 100A/µs
t
= (P
fI
, FORWARD CURRENT (A)
P
D
D
X Z
E
OFF
90%
θ
10
JC
t
10
1
1
t
2
0
/ t
X R
2
E
θ
ON
JC
10%
) + T
t
d(ON)I
HGTG12N60C3D Rev. B
C
15
t
rI
t b
t rr
t a
10
1
20