HGTG12N60C3D Fairchild Semiconductor, HGTG12N60C3D Datasheet - Page 3

• Manufacturer Part Number: HGTG12N60C3D
• Description: IGBT UFS N-CHAN 600V 24A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG12N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 24A
• Power - Max: 104W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 24A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 104W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2001 Fairchild Semiconductor Corporation
Electrical Specifications
NOTE:
Typical Performance Curves
Diode Reverse Recovery Time
Thermal Resistance
3. Turn-Off Energy Loss (E
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
at the point where the collector current equals zero (I
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
4
0
FIGURE 1. TRANSFER CHARACTERISTICS
DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs
T
T
T
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
C
C
C
= 150
= -40
= 25
PARAMETER
V
CE
o
o
o
6
V
C
C
C
, COLLECTOR TO EMITTER VOLTAGE (V)
GE
1
, GATE TO EMITTER VOLTAGE (V)
OFF
T
C
8
CE
2
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending
= -40
GE
= 10V
T
= 10V
C
o
C
= 25
10
3
o
C, Unless Otherwise Specified (Continued)
SYMBOL
R
T
t
θJC
T
rr
12
C
4
C
= 25
= 150
CE
o
= 0A). The HGTG12N60C3D was tested per JEDEC Standard No. 24-1 Method for
C
o
C
I
I
IGBT
Diode
14
EC
EC
5
= 12A, dI
= 1.0A, dI
TEST CONDITIONS
EC
EC
/dt = 100A/µs
/dt = 100A/µs
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
0
FIGURE 2. SATURATION CHARACTERISTICS
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T
0
DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs
V
V
CE
CE
2
, COLLECTOR TO EMITTER VOLTAGE (V)
1
, COLLECTOR TO EMITTER VOLTAGE (V)
V
GE
= 15.0V
MIN
-
-
-
-
4
2
GE
T
= 15V
C
= -40
TYP
34
30
-
-
6
o
3
C
12.0V
HGTG12N60C3D Rev. B
MAX
1.2
1.5
42
37
T
C
8
4
7.0V
T
C
= 150
C
= 25
= 25
UNITS
o
o
10.0V
7.5V
o
9.0V
8.5V
8.0V
C/W
C/W
o
C
ns
ns
C
o
C
10
5