HGTG12N60C3D Fairchild Semiconductor, HGTG12N60C3D Datasheet - Page 5

• Manufacturer Part Number: HGTG12N60C3D
• Description: IGBT UFS N-CHAN 600V 24A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG12N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 24A
• Power - Max: 104W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 24A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 104W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
200
100
2500
2000
1500
1000
2.0
1.5
1.0
0.5
10
500
0
1
0
5
5
0
T
J
f
f
V
MAX1
P
MAX2
P
R
= 150
GE
D
C
θJC
EMITTER CURRENT
EMITTER CURRENT
VOLTAGE
= ALLOWABLE DISSIPATION
= CONDUCTION DISSIPATION
I
I
CE
= 10V
CE
V
(DUTY FACTOR = 50%)
= 1.2
o
= 0.05/(t
= (P
CE
C, R
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
10
, COLLECTOR TO EMITTER VOLTAGE (V)
5
D
o
G
C/W
- P
= 25Ω, L = 100µH, V
D(OFF)I
C
)/(E
10
ON
15
10
V
+ t
GE
+ E
C
D(ON)I
RES
C
= 10V
OFF
IES
T
)
)
R
J
G
20
CE(PK)
= 150
15
= 25Ω, L = 100µH
V
FREQUENCY = 1MHz
GE
(Continued)
C
o
OES
= 15V
C, T
= 480V
20
V
C
GE
25
20
= 75
= 15V
o
C
30
25
30
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
600
480
360
240
120
100
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
FIGURE 14. SWITCHING SAFE OPERATING AREA
0
0
0
5
0
0
T
T
FIGURE 16. GATE CHARGE WAVEFORMS
J
J
= 150
= 150
V
EMITTER CURRENT
CE(PK)
100
I
10
CE
LIMITED BY
CIRCUIT
o
o
10
C, R
, COLLECTOR TO EMITTER CURRENT (A)
C, V
V
, COLLECTOR TO EMITTER VOLTAGE (V)
I
G
CE
Q
GE
G(REF)
V
20
G
= 25Ω, L = 100µH, V
200
CE
= 600V
, GATE CHARGE (nC)
= 15V, R
V
CE
= 200V
= 1.276mA, R
15
= 400V
30
G
300
= 25Ω, L = 100µH
V
40
20
GE
L
400
CE(PK)
= 50Ω, T
= 10V OR 15V
HGTG12N60C3D Rev. B
= 480V
50
500
C
= 25
25
o
60
C
600
15
12
9
6
3
0
30