HGTD1N120BNS9A Fairchild Semiconductor, HGTD1N120BNS9A Datasheet - Page 5

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HGTD1N120BNS9A

Manufacturer Part Number
HGTD1N120BNS9A
Description
IGBT NPT N-CH 1200V 5.3A TO252AA
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTD1N120BNS9A

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.9V @ 15V, 1A
Current - Collector (ic) (max)
5.3A
Power - Max
60W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGTD1N120BNS9A
Manufacturer:
VISHAY
Quantity:
21 000
Part Number:
HGTD1N120BNS9A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
18
16
14
12
10
24
20
16
12
8
6
4
2
0
8
84
80
76
72
68
64
60
56
0
7
0.5
R
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
FIGURE 13. TRANSFER CHARACTERISTIC
R
G
T
G
C
= 82Ω, L = 4mH, V
= 82Ω, L = 4mH, V
= 150
EMITTER CURRENT
EMITTER CURRENT
8
I
CE
T
I
CE
J
, COLLECTOR TO EMITTER CURRENT (A)
V
1
= 25
o
, COLLECTOR TO EMITTER CURRENT (A)
GE
1
C
9
, GATE TO EMITTER VOLTAGE (V)
o
C, V
GE
10
CE
1.5
CE
T
1.5
= 13V
CE
J
= 960V
T
= 960V
= 150
= 20V
C
11
T
T
= -55
J
J
o
= 150
= 25
C, V
o
2
C
12
o
2
GE
o
C, V
C, V
= 15V
(Unless Otherwise Specified) (Continued)
GE
GE
13
150
150
25
25
= 13V
= 15V
T
2.5
T
J
2.5
o
o
o
o
C
C 13V
C 13V
C 15V
C 15V
= 25
14
V
GE
o
C
15
3
3
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
28
24
20
16
12
15
12
360
320
280
240
200
160
120
8
4
9
6
3
0
0.5
0.5
0
R
G
FIGURE 14. GATE CHARGE WAVEFORMS
= 82Ω, L = 4mH, V
T
J
EMITTER CURRENT
EMITTER CURRENT
T
I
= 25
CE
I
J
CE
= 25
, COLLECTOR TO EMITTER CURRENT (A)
1
, COLLECTOR TO EMITTER CURRENT (A)
4
o
1
C, V
V
o
CE
C, T
GE
V
Q
= 400V
CE
J
G
= 13V OR 15V
= 150
, GATE CHARGE (nC)
CE
= 800V
I
T
G(REF)
1.5
J
1.5
8
= 960V
T
= 150
o
J
C, V
R
= 25
HGTD1N120BNS, HGTP1N120BN Rev. B
G
= 1mA, R
o
= 82Ω, L = 4mH, V
GE
C, V
o
C, T
= 13V
12
GE
2
2
J
= 13V OR 15V
= 150
L
= 600Ω, T
o
C, V
V
16
2.5
2.5
CE
CE
GE
C
= 1200V
= 960V
= 25
= 15V
o
C
20
3
3

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