HGTD1N120BNS9A Fairchild Semiconductor, HGTD1N120BNS9A Datasheet
HGTD1N120BNS9A
Specifications of HGTD1N120BNS9A
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HGTD1N120BNS9A Summary of contents
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... PART NUMBER PACKAGE HGTD1N120BNS TO-252AA HGTP1N120BN TO-220AB NOTE: When ordering, use the entire part number. Add the suffi obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A Symbol FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 ...
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... Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge ©2001 Fairchild Semiconductor Corporation Unless Otherwise Specifi (Figure SSOA = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V ...
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... T Typical Performance Curves 100 T , CASE TEMPERATURE ( C FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation o C, Unless Otherwise Specified (Continued) SYMBOL TEST CONDITIONS t IGBT and Diode at T d(ON 1. 960V CE V ...
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... 13V 150 15V J GE 800 600 400 200 0 COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation (Unless Otherwise Specified) (Continued) = 960V 15V 13V o 110 C 15V o C 13V 110 ) 2.0 3 150 ...
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... EMITTER CURRENT 18 DUTY CYCLE < 0.5 20V CE PULSE DURATION = 250µ - 150 GATE TO EMITTER VOLTAGE (V) GE FIGURE 13. TRANSFER CHARACTERISTIC ©2001 Fairchild Semiconductor Corporation (Unless Otherwise Specified) (Continued 13V o 150 C 13V 15V o 150 C 15V 2 2.5 3 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO = 15V 13V 15V ...
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... FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms RHRD4120 L = 4mH R = 82Ω G FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation (Unless Otherwise Specified) (Continued) FREQUENCY = 1MHz FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE - RECTANGULAR PULSE DURATION (s) 1 ...
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... Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specifi ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...