HGTD1N120BNS9A Fairchild Semiconductor, HGTD1N120BNS9A Datasheet - Page 2

• Manufacturer Part Number: HGTD1N120BNS9A
• Description: IGBT NPT N-CH 1200V 5.3A TO252AA
• Manufacturer: Fairchild Semiconductor

Specifications of HGTD1N120BNS9A

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 1A
• Current - Collector (ic) (max): 5.3A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering
Short Circuit Withstand Time (Note 3) at V
Short Circuit Withstand Time (Note 3) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.
2. I
3. V
At T
At T
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CE
CE(PK)
C
C
= 25
= 110
= 7A, L = 400 µ H, V
o
= 840V, T
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
J
= 125
C
GE
C
= 25
o
> 25
= 15V, T
C, R
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
T
G
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
C
T
= 82 Ω.
= 25
C
J
= 25
= 25
GE
GE
o
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
= 13V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
o
o
C.
C, Unless Otherwise Specified
SYMBOL
V
V
Q
BV
BV
CE(SAT)
SSOA
V
GE(TH)
I
I
G(ON)
GES
CES
GEP
CES
ECS
I
I
V
I
V
I
V
T
L = 2mH, V
I
I
V
C
C
C
C
C
C
J
CE
GE
GE
CE
= 250 µ A, V
= 10mA, V
= 1.0A
= 50 µ A, V
= 1.0A, V
= 1.0A
= 150
= 1200V
= 600V
= 15V
= ± 20V
o
TEST CONDITIONS
C, R
CE(PK)
CE
CE
GE
GE
G
= 600V
= V
= 82 Ω, V
= 0V
= 0V
= 1200V
GE
T
T
T
T
T
V
V
J
, T
C
C
C
C
C
GE
GE
C110
GEM
= 25
= 125
= 150
= 25
= 150
GES
GE
CES
STG
C25
pkg
CM
SC
SC
= 15V
= 20V
AV
D
L
= 15V,
o
o
C
C
o
o
o
C
C
C
ALL TYPES
6A at 1200V
-55 to 150
1200
MIN
6.0
0.476
15
1200
6
± 20
± 30
300
260
-
-
-
-
-
-
-
-
-
5.3
2.7
60
10
13
6
8
HGTD1N120BNS, HGTP1N120BN Rev. B
TYP
2.5
3.8
7.1
9.2
20
14
15
-
-
-
-
-
-
MAX
± 250
250
1.0
2.9
4.3
20
21
-
-
-
-
-
-
UNITS
W/
mJ
o
o
o
W
µ s
µ s
V
A
A
A
V
V
C
C
C
UNITS
o
C
mA
µ A
µ A
nA
nC
nC
V
V
V
V
V
A
V