EGP10J Fairchild Semiconductor, EGP10J Datasheet - Page 103
![DIODE FAST GPP 1A 600V DO-41](/photos/5/24/52465/261-do-41_sml.jpg)
EGP10J
Manufacturer Part Number
EGP10J
Description
DIODE FAST GPP 1A 600V DO-41
Manufacturer
Fairchild Semiconductor
Specifications of EGP10J
Voltage - Forward (vf) (max) @ If
1.7V @ 1A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75ns
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP10J
Manufacturer:
VISHAY
Quantity:
22 000
Part Number:
EGP10J
Manufacturer:
VISHAY/威世
Quantity:
20 000
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Small Signal Transistors – General Purpose Transistors
SOT-223 NPN Configuration
BCP68
FZT649
NZT6714
PZT3904
PZT2222A
NZT6715
BCP54
BCP55
NZT560A
NZT560
NZT651
NZT44H8
FZT3019
PZTA06
NZT6717
BCP56
PZTA42
FJT44
SOT-223 PNP Configuration
BCP69
FZT749
NZT6726
NZT6727
PZT3906
FZT790A
BCP51
PZT2907A
BCP52
NZT6728
NZT660A
NZT660
NZT749
NZT751
NZT45H8
Products
V
CEO
300
400
20
25
30
40
40
40
45
60
60
60
60
60
80
80
80
80
20
25
30
40
40
40
45
60
60
60
60
60
60
60
60
(V)
V
CBO
140
800
300
100
500
30
35
40
60
75
50
45
60
80
80
80
80
30
35
40
50
40
50
45
60
60
60
80
80
80
80
–
–
(V)
V
EBO
5
5
5
6
6
5
5
5
5
5
5
–
7
4
5
5
6
6
5
5
5
5
5
5
5
5
5
5
5
5
5
5
–
(V)
Max (A)
0.2
1.5
1.5
1.5
0.5
1.2
1.2
0.5
0.3
1.5
0.2
0.8
1.2
1.2
I
1
3
2
1
3
3
4
8
–
1
3
–
3
–
3
3
4
4
8
C
Min
100
100
100
250
100
100
100
100
300
100
250
100
85
50
50
40
40
75
60
50
50
40
40
50
85
50
50
40
40
50
75
75
60
2-98
Discrete Power Products –
Max
375
300
250
300
300
250
250
250
550
300
250
250
200
375
300
250
250
300
250
300
250
250
550
300
80
–
–
–
–
–
–
–
–
h
FE
@V
10
10
10
10
10
CE
1
2
1
1
1
2
2
2
2
2
1
1
1
2
1
2
1
1
1
2
2
2
1
2
2
2
2
1
(V) @I
1000
1000
1000
1000
1000
1000
C
500
150
150
150
500
500
500
100
250
150
500
150
150
150
250
500
500
500
500
10
30
10
10
10
2
1
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.45
0.25
0.35
0.75
0.55
0.5
0.6
0.5
0.3
0.5
0.5
0.5
0.4
0.5
0.2
0.5
0.5
0.5
0.6
0.5
0.5
0.4
0.3
0.5
1.6
0.5
0.5
0.5
0.5
0.5
1
1
1
@I
V
CE (sat)
3000
1000
1000
3000
3000
2000
8000
3000
1000
1000
1000
3000
3000
2000
2000
8000
C
500
500
500
150
100
250
500
500
500
500
250
50
20
50
50
1
1
(mA) @I
B
100
300
100
100
300
300
200
400
100
300
100
100
100
300
300
200
200
400
50
50
50
15
10
10
50
50
50
50
10
5
2
5
5
(mA)
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