EGP10J Fairchild Semiconductor, EGP10J Datasheet
EGP10J
Manufacturer Part Number
EGP10J
Description
DIODE FAST GPP 1A 600V DO-41
Manufacturer
Fairchild Semiconductor
Specifications of EGP10J
Voltage - Forward (vf) (max) @ If
1.7V @ 1A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75ns
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP10J
Manufacturer:
VISHAY
Quantity:
22 000
Part Number:
EGP10J
Manufacturer:
VISHAY/威世
Quantity:
20 000
©2007 Fairchild Semiconductor Corporation
EGP10A - EGP10K Rev. A
EGP10A - EGP10K
1.0 Ampere Glass Passivated High Efficiency Rectifiers
Features
• Superfast recovery time for high efficiency
• Low forward voltage, high current capability
• Low leakage current
• High surge current capability
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
I
i
P
I
T
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated V
Maximum Reverse Current
@ rated V
T
Maximum Reverse Recovery Time
I
Maximum Forward Voltage @ 1.0 A
Typical Junction Capacitance
V
Symbol
f(surge)
O
C
F
J
A
D
R
= 0.5 A, I
, T
= 125°C
= 4.0 V, f = 1.0 MHz
STG
R
R
T
Average Rectified Current
.375 " lead length @ T
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature Range
= 1.0 A, I
A
Parameter
= 25°C
rr
= 0.25 A
R
)
Parameter
L
= 75°C
T
a
10A
= 25°C unless otherwise noted
50
35
50
T
a
= 25°C unless otherwise noted
COLOR BAND DENOTES CATHODE
10B
100
100
DO-41 Glass case
70
0.95
22
10C
150
105
150
1
50
10D
200
140
200
Device
100
5.0
10F
300
210
300
-65 ~ 150
Value
1.0
2.5
1.25
30
17
50
10G
400
280
400
15
10J
600
420
600
1.7
75
10K
800
560
800
July 2007
www.fairchildsemi.com
Units
mW°C
°C/W
°C
W
A
A
Units
μA
μA
nS
pF
V
V
V
V
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EGP10J Summary of contents
Page 1
... R rr Maximum Forward Voltage @ 1.0 A Typical Junction Capacitance 1.0 MHz R * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% ©2007 Fairchild Semiconductor Corporation EGP10A - EGP10K Rev. A DO-41 Glass case COLOR BAND DENOTES CATHODE T = 25°C unless otherwise noted a = 75° 25° ...
Page 2
Typical Performance Characteristics EGP10A - EGP10K Rev www.fairchildsemi.com ...
Page 3
Reverse Recovery Time Characterstic and Test Circuit Diagram EGP10A - EGP10K Rev www.fairchildsemi.com ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...