EGP10J Fairchild Semiconductor, EGP10J Datasheet - Page 198
EGP10J
Manufacturer Part Number
EGP10J
Description
DIODE FAST GPP 1A 600V DO-41
Manufacturer
Fairchild Semiconductor
Specifications of EGP10J
Voltage - Forward (vf) (max) @ If
1.7V @ 1A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75ns
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP10J
Manufacturer:
VISHAY
Quantity:
22 000
Part Number:
EGP10J
Manufacturer:
VISHAY/威世
Quantity:
20 000
- Current page: 198 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Through-Hole
Note: Refer to individual product datasheet for specific product package dimensions
Bold = preferred package
Module
Note: Refer to individual product datasheet for specific product package dimensions
Discrete
PDF links for all the packaging information is at: http://www.fairchildsemi.com/products/discrete/packaging/pkg.html
TO-220F
TO-220F-2L
TO-226AE
TO-226AE
TO-247-2L
TO-247-3L
TO-264
TO-264
(P Option)
WOB
7PM-GA (Molding)
7PM-HA
7PM-IA
24PM-AA
25PM-AA
SPM32-AA
Package Name
Package name
(Continued)
Prefixes Suffixes
(Continued)
MOSFET
Bipolar
P
MOSFET
X
X
X
X
X
Diode
Bipolar
Products
X
X
X
X
X
X
JFETs
Products
Diode
X
X
X
X
X
X
7-12
IGBT
X
X
X
X
X
JFETs
X
X
IGBT
SPM
X
X
X
X
Pkg Method Qty (pcs)
Tape & Reel
Ammo Box
Method
Tube
Tube
Tube
Tube
Tube
Tube
Box
Pkg
Bulk
Bulk
Bulk
Bulk
Bulk
Tube
Qty (pcs)
Packagig Standard
Packaging Standard
384
120
48
40
40
40
50
50
2K
2K
30
30
25
25
1K
Packaging Information
Reel Dia
Reel Dia
(inch)
(inch)
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
13
Tape Width
Tape Width
0.2 ± 0.19
(mm)
0.708
(mm)
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
Related parts for EGP10J
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: