PBSS4041PZ NXP Semiconductors, PBSS4041PZ Datasheet - Page 9

• Manufacturer Part Number: PBSS4041PZ
• Description: TRANSISTOR,NPN,60V,5.7A,SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041PZ

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -60V
• Power Dissipation Pd: 770mW
• Dc Collector Current: -5.7A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-223
• No.: RoHS Compliant
• Dc Current Gain Hfe: 300
• Rohs Compliant: Yes

NXP Semiconductors
8. Test information
PBSS4041PZ_1
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
90 %
10 %
90 %
10 %
− I
− I
B
C
All information provided in this document is subject to legal disclaimers.
oscilloscope
t
d
t
on
Rev. 01 — 31 March 2010
V
t
I
r
(probe)
450 Ω
R1
R2
R
B
V
BB
60 V, 5.7 A PNP low V
R
C
V
CC
DUT
V
o
mgd624
− I
(probe)
450 Ω
Bon
t
− I
s
(100 %)
Boff
t
PBSS4041PZ
off
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
t
f
− I
006aaa266
C
(100 %)
t
9 of 15