PBSS4041PZ NXP Semiconductors, PBSS4041PZ Datasheet - Page 2

• Manufacturer Part Number: PBSS4041PZ
• Description: TRANSISTOR,NPN,60V,5.7A,SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041PZ

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -60V
• Power Dissipation Pd: 770mW
• Dc Collector Current: -5.7A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-223
• No.: RoHS Compliant
• Dc Current Gain Hfe: 300
• Rohs Compliant: Yes

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PBSS4041PZ_1
Product data sheet
Table 2.
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
Type number
PBSS4041PZ
Type number
PBSS4041PZ
Symbol
V
V
V
I
I
I
C
CM
B
CBO
CEO
EBO
Pinning
Ordering information
Marking codes
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
base
collector
emitter
collector
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
SC-73
Rev. 01 — 31 March 2010
Description
plastic surface-mounted package with increased
heat sink; 4 leads
open emitter
open base
open collector
Conditions
single pulse;
t
p
≤ 1 ms
60 V, 5.7 A PNP low V
Marking code
PB4041PZ
Simplified outline
1
2
PBSS4041PZ
-
-
-
Min
-
-
-
4
3
CEsat
Graphic symbol
© NXP B.V. 2010. All rights reserved.
Max
−60
−60
−5
−5.7
−15
−1
(BISS) transistor
1
sym028
Version
SOT223
2, 4
Unit
V
V
V
A
A
A
3
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