PBSS4041PZ NXP Semiconductors, PBSS4041PZ Datasheet
PBSS4041PZ
Specifications of PBSS4041PZ
Related parts for PBSS4041PZ
PBSS4041PZ Summary of contents
Page 1
... PBSS4041PZ 60 V, 5.7 A PNP low V Rev. 01 — 31 March 2010 1. Product profile 1.1 General description PNP low V medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4041NZ. 1.2 Features and benefits Very low collector-emitter saturation voltage V High collector current capability I High collector current gain (h ...
Page 2
... All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 PBSS4041PZ 60 V, 5.7 A PNP low V (BISS) transistor CEsat Simplified outline Graphic symbol Marking code PB4041PZ ...
Page 3
... P tot (W) 2.0 (2) 1.0 (3) 0 −75 − standard footprint 2 3 Power derating curves All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 PBSS4041PZ 60 V, 5.7 A PNP low V CEsat Min ≤ 25 °C [1] - [ −55 −65 006aac060 25 75 125 175 T (° ...
Page 4
... O , standard footprint −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 PBSS4041PZ 60 V, 5.7 A PNP low V CEsat Conditions Min Typ [1] in free air - - [ [ ...
Page 5
... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4041PZ_1 Product data sheet −3 −2 − −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 PBSS4041PZ 60 V, 5.7 A PNP low V (BISS) transistor CEsat 006aac062 006aac063 © ...
Page 6
... V; transition frequency −100 mA 100 MHz = −10 V; collector capacitance MHz E e ≤ 300 μs; δ ≤ 0.02. p All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 PBSS4041PZ 60 V, 5.7 A PNP low V CEsat Min Typ = [1] ...
Page 7
... I (mA) C (1) T (2) T (3) T Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 PBSS4041PZ 60 V, 5.7 A PNP low V CEsat (mA) = −170 I B −136 −102 −68 −34 0.0 −1.0 −2.0 −3.0 0 °C T amb Collector current as a function of collector-emitter voltage ...
Page 8
... I (mA) C (1) I (2) I (3) I Fig 12. Collector-emitter saturation resistance as a All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 PBSS4041PZ 60 V, 5.7 A PNP low V CEsat −1 −1 (1) (2) −2 (3) −3 −1 −10 −1 −10 −10 2 − ° ...
Page 9
... Product data sheet 60 V, 5.7 A PNP low (probe) oscilloscope 450 Ω All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 PBSS4041PZ (BISS) transistor CEsat input pulse (idealized waveform) − I (100 %) Bon − I Boff output pulse (idealized waveform off ...
Page 10
... Dimensions in mm Packing methods SOT223 8 mm pitch tape and reel All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 PBSS4041PZ 60 V, 5.7 A PNP low V (BISS) transistor CEsat 1.8 1.5 4 1.1 0 0.8 0.32 ...
Page 11
... All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 PBSS4041PZ 60 V, 5.7 A PNP low V CEsat 6.1 3.9 7.65 6.2 8.7 3 1.9 (3×) (BISS) transistor solder lands solder resist solder paste ...
Page 12
... PBSS4041PZ_1 Product data sheet 60 V, 5.7 A PNP low V Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 PBSS4041PZ (BISS) transistor CEsat Change notice Supersedes - - © NXP B.V. 2010. All rights reserved. ...
Page 13
... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 PBSS4041PZ 60 V, 5.7 A PNP low V (BISS) transistor CEsat © NXP B.V. 2010. All rights reserved. ...
Page 14
... For sales office addresses, please send an email to: PBSS4041PZ_1 Product data sheet http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 31 March 2010 PBSS4041PZ 60 V, 5.7 A PNP low V (BISS) transistor CEsat © NXP B.V. 2010. All rights reserved ...
Page 15
... NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com (BISS) transistor CEsat All rights reserved. Date of release: 31 March 2010 Document identifier: PBSS4041PZ_1 ...