PBSS4041PZ NXP Semiconductors, PBSS4041PZ Datasheet - Page 8

• Manufacturer Part Number: PBSS4041PZ
• Description: TRANSISTOR,NPN,60V,5.7A,SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041PZ

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -60V
• Power Dissipation Pd: 770mW
• Dc Collector Current: -5.7A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-223
• No.: RoHS Compliant
• Dc Current Gain Hfe: 300
• Rohs Compliant: Yes

NXP Semiconductors
PBSS4041PZ_1
Product data sheet
Fig 9.
Fig 11. Collector-emitter saturation resistance as a
V
R
CEsat
−10
−10
−10
CEsat
(Ω)
(V)
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
10
10
10
−1
−1
−2
−3
−1
−2
−10
−10
1
3
2
I
function of collector current; typical values
I
function of collector current; typical values
Collector-emitter saturation voltage as a
C
C
−1
−1
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 20
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
−1
−1
−10
−10
(2)
(3)
(1)
−10
−10
2
2
−10
−10
(1)
3
3
(2)
(3)
All information provided in this document is subject to legal disclaimers.
−10
−10
006aac168
006aac170
I
I
C
C
4
4
(mA)
(mA)
−10
−10
Rev. 01 — 31 March 2010
5
5
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
R
V
−10
−10
−10
CEsat
CEsat
(Ω)
(V)
(1) I
(2) I
(3) I
10
10
(1) I
(2) I
(3) I
10
10
−1
10
−1
−2
−3
−1
−2
−10
−10
1
3
2
T
function of collector current; typical values
T
function of collector current; typical values
60 V, 5.7 A PNP low V
C
C
C
C
C
C
−1
−1
amb
amb
/I
/I
/I
/I
/I
/I
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 °C
= 25 °C
−1
−1
−10
−10
(1)
(2)
(3)
(1)
(2)
(3)
−10
−10
PBSS4041PZ
2
2
−10
−10
CEsat
3
3
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
−10
−10
006aac169
006aac171
I
I
C
C
4
4
(mA)
(mA)
−10
−10
5
5
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