PBSS4041PZ NXP Semiconductors, PBSS4041PZ Datasheet - Page 7

• Manufacturer Part Number: PBSS4041PZ
• Description: TRANSISTOR,NPN,60V,5.7A,SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041PZ

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -60V
• Power Dissipation Pd: 770mW
• Dc Collector Current: -5.7A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-223
• No.: RoHS Compliant
• Dc Current Gain Hfe: 300
• Rohs Compliant: Yes

NXP Semiconductors
PBSS4041PZ_1
Product data sheet
Fig 5.
Fig 7.
V
h
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
−1.2
BE
−0.8
−0.4
500
400
300
200
100
0.0
−10
−10
0
V
DC current gain as a function of collector
current; typical values
V
current; typical values
Base-emitter voltage as a function of collector
−1
−1
amb
amb
amb
amb
amb
amb
CE
CE
= −2 V
= −2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
(1)
(2)
(3)
−10
−10
(1)
(2)
(3)
−10
−10
2
2
−10
−10
3
3
All information provided in this document is subject to legal disclaimers.
−10
−10
006aac164
006aac166
I
I
C
C
4
4
(mA)
(mA)
−10
−10
Rev. 01 — 31 March 2010
5
5
Fig 6.
Fig 8.
V
−16.0
−12.0
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
C
−8.0
−4.0
−1.3
−0.9
−0.5
−0.1
0.0
−10
0.0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
60 V, 5.7 A PNP low V
C
−1
amb
amb
amb
amb
/I
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1.0
(1)
(2)
(3)
−10
−2.0
−10
I
B
PBSS4041PZ
(mA) = −170
2
−3.0
−10
CEsat
−136
−102
−68
−34
3
−4.0
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
−10
−17
006aac165
006aac167
V
−153
−119
I
CE
C
−85
−51
4
(mA)
(V)
−10
−5.0
5
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