PBSS4041PZ NXP Semiconductors, PBSS4041PZ Datasheet - Page 3

• Manufacturer Part Number: PBSS4041PZ
• Description: TRANSISTOR,NPN,60V,5.7A,SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041PZ

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -60V
• Power Dissipation Pd: 770mW
• Dc Collector Current: -5.7A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-223
• No.: RoHS Compliant
• Dc Current Gain Hfe: 300
• Rohs Compliant: Yes

NXP Semiconductors
PBSS4041PZ_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
P
T
T
T
Fig 1.
j
amb
stg
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Power derating curves
Limiting values
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
All information provided in this document is subject to legal disclaimers.
P
(W)
Rev. 01 — 31 March 2010
tot
2
3.0
2.0
1.0
O
0
−75
3
, standard footprint
…continued
−25
2
(1)
(2)
(3)
O
Conditions
T
3
, standard footprint.
amb
25
≤ 25 °C
60 V, 5.7 A PNP low V
2
75
125
T
006aac060
amb
[1]
[2]
[3]
(°C)
PBSS4041PZ
-
175
Min
-
-
-
−55
−65
CEsat
© NXP B.V. 2010. All rights reserved.
Max
770
1700
2600
150
+150
+150
(BISS) transistor
Unit
mW
mW
mW
°C
°C
°C
2
.
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