PBSS4041PZ NXP Semiconductors, PBSS4041PZ Datasheet - Page 4

• Manufacturer Part Number: PBSS4041PZ
• Description: TRANSISTOR,NPN,60V,5.7A,SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041PZ

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -60V
• Power Dissipation Pd: 770mW
• Dc Collector Current: -5.7A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-223
• No.: RoHS Compliant
• Dc Current Gain Hfe: 300
• Rohs Compliant: Yes

NXP Semiconductors
6. Thermal characteristics
PBSS4041PZ_1
Product data sheet
Fig 2.
Z
(K/W)
th(j-a)
10
10
10
10
−1
1
3
2
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
duty cycle = 1
0
0.33
0.1
0.02
0.75
0.05
0.01
0.5
0.2
10
−4
Table 6.
[1]
[2]
[3]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
10
−3
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
All information provided in this document is subject to legal disclaimers.
10
−2
Rev. 01 — 31 March 2010
10
−1
2
O
3
, standard footprint.
Conditions
in free air
60 V, 5.7 A PNP low V
1
10
[1]
[2]
[3]
Min
-
-
-
-
PBSS4041PZ
CEsat
10
Typ
-
-
-
-
2
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
t
p
006aac061
(s)
Max
160
75
50
11
10
3
2
.
Unit
K/W
K/W
K/W
K/W
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