DSPIC30F5011-20E/PT Microchip Technology, DSPIC30F5011-20E/PT Datasheet - Page 50
DSPIC30F5011-20E/PT
Manufacturer Part Number
DSPIC30F5011-20E/PT
Description
IC,DSP,16-BIT,CMOS,TQFP,64PIN,PLASTIC
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F2011-20ISO.pdf
(66 pages)
2.DSPIC30F2011-20IP.pdf
(26 pages)
3.DSPIC30F5011-20IPT.pdf
(220 pages)
4.DSPIC30F5011-20IPT.pdf
(16 pages)
5.DSPIC30F5011-20IPT.pdf
(6 pages)
6.DSPIC30F5011-20IPT.pdf
(14 pages)
7.DSPIC30F5011-20IPT.pdf
(26 pages)
Specifications of DSPIC30F5011-20E/PT
Rohs Compliant
YES
Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
AC'97, Brown-out Detect/Reset, I²S, LVD, POR, PWM, WDT
Number Of I /o
52
Program Memory Size
66KB (22K x 24)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
64-TFQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT64PT5 - SOCKET TRAN ICE 64MQFP/TQFPAC30F008 - MODULE SKT FOR DSPIC30F 64TQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DSPIC30F5011-20E/PTG
DSPIC30F501120EPT
DSPIC30F501120EPT
DSPIC30F501120EPT
DSPIC30F501120EPT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSPIC30F5011-20E/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
- DSPIC30F2011-20ISO PDF datasheet
- DSPIC30F2011-20IP PDF datasheet #2
- DSPIC30F5011-20IPT PDF datasheet #3
- DSPIC30F5011-20IPT PDF datasheet #4
- DSPIC30F5011-20IPT PDF datasheet #5
- DSPIC30F5011-20IPT PDF datasheet #6
- DSPIC30F5011-20IPT PDF datasheet #7
- Current page: 50 of 220
- Download datasheet (4Mb)
dsPIC30F5011/5013
6.6.3
Example 6-2
can be used to load the 96 bytes of write latches. 32
TBLWTL and 32 TBLWTH instructions are needed to
load the write latches selected by the table pointer.
EXAMPLE 6-2:
6.6.4
For protection, the write initiate sequence for NVMKEY
must be used to allow any erase or program operation
to proceed. After the programming command has been
executed, the user must wait for the programming time
until programming is complete. The two instructions fol-
lowing the start of the programming sequence should
be NOPs.
EXAMPLE 6-3:
DS70116J-page 50
; Set up a pointer to the first program memory location to be written
; program memory selected, and writes enabled
; Perform the TBLWT instructions to write the latches
; 0th_program_word
; 1st_program_word
;
; 31st_program_word
Note: In
2nd_program_word
Example
MOV
MOV
MOV
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
•
•
•
MOV
MOV
TBLWTL W2
TBLWTH W3
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
LOADING WRITE LATCHES
INITIATING THE PROGRAMMING
SEQUENCE
shows a sequence of instructions that
#0x0000,W0
W0
#0x6000,W0
#LOW_WORD_0,W2
#HIGH_BYTE_0,W3
#LOW_WORD_1,W2
#HIGH_BYTE_1,W3
#LOW_WORD_2,W2
#HIGH_BYTE_2,W3
#LOW_WORD_31,W2
#HIGH_BYTE_31,W3
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
6-2, the contents of the upper byte of W3 has no effect.
,
,
,
,
,
,
,
,
,
,
,
LOADING WRITE LATCHES
INITIATING A PROGRAMMING SEQUENCE
TBLPAG
[W0]
[W0++]
[W0]
[W0++]
NVMKEY
NVMKEY
[W0]
[W0++]
[W0]
[W0++]
; Block all interrupts with priority <7 for
; next 5 instructions
;
; Write the 0x55 key
;
; Write the 0xAA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
;
; Initialize PM Page Boundary SFR
; An example program memory address
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
© 2011 Microchip Technology Inc.
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