DSPIC30F5011-20E/PT Microchip Technology, DSPIC30F5011-20E/PT Datasheet - Page 172

• Manufacturer Part Number: DSPIC30F5011-20E/PT
• Description: IC,DSP,16-BIT,CMOS,TQFP,64PIN,PLASTIC
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F5011-20E/PT

• Rohs Compliant: YES
• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 20 MIPS
• Connectivity: CAN, I²C, SPI, UART/USART
• Peripherals: AC'97, Brown-out Detect/Reset, I²S, LVD, POR, PWM, WDT
• Number Of I /o: 52
• Program Memory Size: 66KB (22K x 24)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 64-TFQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT64PT5 - SOCKET TRAN ICE 64MQFP/TQFPAC30F008 - MODULE SKT FOR DSPIC30F 64TQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DSPIC30F5011-20E/PTG; DSPIC30F501120EPT; DSPIC30F501120EPT

dsPIC30F5011/5013
TABLE 23-11: ELECTRICAL CHARACTERISTICS: BOR
TABLE 23-12: DC CHARACTERISTICS: PROGRAM AND EEPROM
DS70116J-page 172
DC CHARACTERISTICS
BO10
BO15
Note 1:
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D130
D131
D132
D133
D134
D135
D137
D138
Note 1:
Param
Param
No.
No.
2:
3:
2:
E
V
T
T
I
E
V
V
V
T
T
I
I
Symbol
DEW
PEW
EB
Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
These parameters are characterized but not tested in manufacturing.
11 values not in usable operating range.
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
These parameters are characterized but not tested in manufacturing.
DEW
RETD
EB
PEW
RETD
V
V
D
DRW
P
PR
PEW
Symbol
BOR
BHYS
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
I
Program FLASH Memory
Cell Endurance
V
V
V
Erase/Write Cycle Time
Characteristic Retention
I
I
DD
DD
DD
DD
DD
DD
DD
BOR Voltage
V
low
During Programming
During Programming
During Programming
DD
for Read/Write
for Read
for Bulk Erase
for Erase/Write
Characteristic
transition high to
Characteristic
(2)
on
(2)
(2)
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
BORV = 11
BORV = 10
BORV = 01
BORV = 00
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
100K
V
V
Min
10K
0.8
4.5
3.0
0.8
40
40
—
—
—
MIN
MIN
Typ
100K
(3)
100
100
1M
10
10
10
—
—
—
—
2
2
(1)
2.60
4.10
4.58
Min
—
—
Max
5.5
2.6
5.5
5.5
5.5
2.6
30
30
30
—
—
—
—
Typ
-40°C ≤ T
-40°C ≤ T
—
—
—
—
5
-40°C ≤ T
-40°C ≤ T
Units
(1)
Year
Year
E/W
E/W
mA
mA
mA
ms
ms
V
V
V
V
A
A
Max
2.71
4.40
4.73
—
—
≤ +85°C for Industrial
≤ +125°C for Extended
-40° C ≤ T
Using EECON to read/write
V
voltage
RTSP
Provided no other specifications
are violated
Row Erase
-40° C ≤ T
V
voltage
RTSP
Provided no other specifications
are violated
Row Erase
Bulk Erase
A
A
MIN
MIN
≤ +85°C for Industrial
≤ +125°C for Extended
© 2011 Microchip Technology Inc.
Units
= Minimum operating
= Minimum operating
mV
V
V
V
V
A
A
Conditions
≤ +85°C
≤ +85°C
Not in operating
range
Conditions