FGH60N60SMD Fairchild Semiconductor, FGH60N60SMD Datasheet - Page 7

• Manufacturer Part Number: FGH60N60SMD
• Description: IGBT 600V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH60N60SMD

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 60A
• Current - Collector (ic) (max): 120A
• Power - Max: 600W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH60N60SMD Rev. A1
Typical Performance Characteristics
Figure 19. Current Derating
Figure 21. Forward Characteristics
Figure 23. Stored Charge
200
100
350
300
250
200
150
100
10
50
130
120
110
100
1
90
80
70
60
50
40
30
20
10
0
0
0
25
T
T
C
C
Collector-EmitterCase Temperature, T
= 25
= 175
10
50
o
C
o
di/dt = 200A/
C ----
1
T
Forward Voltage, V
C
Forwad Current, I
= 175
20
75
T
o
C
C
= 25
μ
T
s
2
100
C
30
= 75
o
C
T
di/dt = 100A/
C
o
C
= 125
F
Common Emitter
V
T
T
T
T
F
125
40
GE
[A]
C
C
C
C
[V]
= 25
= 75
= 125
= 175
= 15V
o
3
C
o
o
C
C ----
o
o
150
μ
C ----
C
50
s
C
[
o
C]
175
4
60
7
10000
1000
0.01
180
160
140
120
100
100
Figure 22. Reverse Current
100
Figure 20. Load Current Vs. Frequency
0.1
80
60
40
20
90
80
70
60
50
40
30
20
10
0
Figure 24. Reverse Recovery Time
1
1k
0
0
T
T
C
C
= 25
= 175
100
10
di/dt = 200A/
o
Tc = 100
C
o
Switching Frequency, f [Hz]
C ----
Reverse Voltage,V
Forward Current, I
10k
200
20
o
Square Wave
T
V
C
J
GE
T
T
μ
T
< 175
T
C
C
s
C
= 15/0V, R
C
= 175
= 125
= 75
300
= 25
30
Tc = 75
o
C, D = 0.5, V
o
o
o
C
o
C
C
C
100k
G
R
F
400
o
di/dt = 100A/
40
= 3
[V]
C
[A]
Ω
CE
= 400V
500
50
μ
s
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600
1M
60