FGH60N60SMD Fairchild Semiconductor, FGH60N60SMD Datasheet - Page 6

• Manufacturer Part Number: FGH60N60SMD
• Description: IGBT 600V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH60N60SMD

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 60A
• Current - Collector (ic) (max): 120A
• Power - Max: 600W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH60N60SMD Rev. A1
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 15. Turn-off Characteristics vs.
Figure 17. Switching Loss vs.
6000
1000
1000
100
100
0.01
10
10
0.1
10
1
1
0
0
0
Common Emitter
V
I
T
T
C
C
C
CC
Collector Current
= 60A
Gate Resistance
= 25
= 175
Collector Current
= 400V, V
o
C
10
o
C
Gate Resistance, R
30
30
Collector Current, I
Collector Current, I
GE
t
E
t
d(off)
f
on
= 15V
20
E
off
60
60
30
Common Emitter
V
T
T
Common Emitter
V
T
T
C
C
GE
G
GE
C
C
C
= 25
= 175
C
= 25
= 175
[
t
[A]
d(off)
Ω
= 15V, R
= 15V, R
t
[A]
f
]
o
90
90
o
C
o
C
o
C
C
40
G
G
= 3
= 3
Ω
Ω
120
120
50
6
1000
100
0.1
300
100
10
10
1
5
1
1
Figure 14. Turn-on Characteristics vs.
Figure 16. Switching Loss vs.
0
0
1
Figure 18. Turn off Switching
Common Emitter
V
T
T
GE
C
C
= 25
= 175
= 15V, R
10
Collector-Emitter Voltage, V
o
C
o
Safe Operating Area
V
C
30
Collector Current, I
E
GE
E
Gate Resistance, R
on
off
G
Gate Resistance
= 15V, T
Collector Current
= 3
SOA Characteristics
10
Ω
20
C
= 175
60
Common Emitter
V
I
T
T
C
CC
C
C
= 60A
o
30
= 25
= 175
C
= 400V, V
C
t
100
d(on)
t
G
o
r
[A]
C
o
[
C
Ω
90
]
CE
GE
40
[V]
= 15V
1000
120
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