FGH60N60SMD Fairchild Semiconductor, FGH60N60SMD Datasheet - Page 3

• Manufacturer Part Number: FGH60N60SMD
• Description: IGBT 600V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH60N60SMD

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 60A
• Current - Collector (ic) (max): 120A
• Power - Max: 600W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH60N60SMD Rev. A1
Electrical Characteristics of the IGBT
Electrical Characteristics of the Diode
Q
Q
Q
V
E
t
Q
Symbol
Symbol
rr
FM
rec
g
ge
gc
rr
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Diode Forward Voltage
Reverse Recovery Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
Parameter
V
V
I
I
F
F
CE
GE
= 30A
=30A, dI
= 400V, I
= 15V
Test Conditions
Test Conditions
F
/dt = 200A/μs
(Continued)
C
T
= 60A,
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
T
C
C
C
C
C
C
C
= 25
= 175
= 175
= 25
= 175
= 25
= 175
o
o
o
C
C
C
o
o
o
o
C
C
C
C
Min.
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
189
238
2.1
1.7
20
91
79
30
72
44
Max
Max
284
137
2.7
30
39
62
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-
-
-
-
Units
Units
nC
nC
nC
nC
uJ
ns
V