FCH76N60NF Fairchild Semiconductor, FCH76N60NF Datasheet - Page 4

MOSFET N-CH 600V 72.8A TO247-3

FCH76N60NF

Manufacturer Part Number
FCH76N60NF
Description
MOSFET N-CH 600V 72.8A TO247-3
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet

Specifications of FCH76N60NF

Input Capacitance (ciss) @ Vds
11045pF @ 100V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
38 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
72.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
300nC @ 10V
Power - Max
543W
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
28.7 mOhms
Forward Transconductance Gfs (max / Min)
92 S
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
72.8 A
Power Dissipation
543 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCH76N60NF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FCH76N60NF
Quantity:
780
Company:
Part Number:
FCH76N60NF
Quantity:
780
FCH76N60NF Rev. A2
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
1000
0.01
100
1.2
1.1
1.0
0.9
0.8
0.1
10
-100
1
1
Operation in This Area
is Limited by R
-50
vs. Temperature
T
V
J
, Junction Temperature
DS
, Drain-Source Voltage [V]
1E-3
DS(on)
10
0
0.01
0.3
0.1
10
0.05
0.5
0.02
0.2
0.1
0.01
Single pulse
-5
50
*Notes:
1. T
2. T
3. Single Pulse
100
100
C
J
Figure 11. Transient Thermal Response Curve
10
DC
= 150
= 25
*Notes:
10ms
-4
1. V
2. I
[
1ms
100
o
C
o
D
C
o
150
GS
]
C
30
μ
= 250
s
μ
= 0V
s
Rectangular Pulse Duration [sec]
μ
A
10
1000
200
-3
(Continued)
10
-2
4
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
3.0
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
0
-100
25
10
*Notes:
-1
1. Z
2. Duty Factor, D = t
3. T
P
-50
θ
JM
DM
JC
50
T
T
- T
vs. Temperature
(t) = 0.23
J
C
vs. Case Temperature
, Junction Temperature
, Case Temperature
C
= P
10
t
0
1
DM
0
t
o
2
C/W Max.
75
* Z
1
θ
/t
JC
50
2
(t)
100
10
1
100
[
o
C
*Notes:
[
]
1. V
2. I
o
125
C
D
150
]
GS
= 38A
www.fairchildsemi.com
= 10V
200
150

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