FCH76N60NF Fairchild Semiconductor, FCH76N60NF Datasheet - Page 2

• Manufacturer Part Number: FCH76N60NF
• Description: MOSFET N-CH 600V 72.8A TO247-3
• Manufacturer: Fairchild Semiconductor
• Series: SupreMOS™r

Specifications of FCH76N60NF

• Input Capacitance (ciss) @ Vds: 11045pF @ 100V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 38 mOhm @ 38A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 72.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Power - Max: 543W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 28.7 mOhms
• Forward Transconductance Gfs (max / Min): 92 S
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 72.8 A
• Power Dissipation: 543 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCH76N60NF Rev. A2
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
3. I
4. Essentially Independent of Operating Temperature Typical Characteristics
BV
ΔBV
I
I
V
R
g
C
C
C
C
C
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
g(tot)
gs
gd
rr
AS
SD
Device Marking
DSS
Symbol
J
FCH76N60NF
= 24.3 A, R
≤ 72.8 A, di/dt ≤ 1200A/μs, V
DSS
eff.
G
= 25Ω, Starting T
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
FCH76N60NF
J
= 25°C
≤ 380V, Starting T
Device
Parameter
T
J
C
= 25°C
= 25
o
C unless otherwise noted
Package
TO-247
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
V
Drain Open
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
DS
DS
GS
G
F
= 1mA, V
= 1mA, Referenced to 25
/dt = 100A/μs
= 4.7Ω
= 480V, V
= 480V, V
= 0V, I
= ±30V, V
= 20V, I
= 100V, V
= 380V, V
= 0V to 380V, V
= 380V, I
= 380V, I
= 0V, I
= V
= 10V, I
= 10V
DS
Test Conditions
, I
SD
2
SD
GS
D
Reel Size
D
D
D
D
= 38A
= 38A
= 38A
GS
GS
= 38A
DS
= 250μA
GS
GS
= 0V, T
= 38A
= 38A,
(Note 4)
(Note 4)
-
= 0V
= 0V, T
= 0V
= 0V
= 0V, f = 1MHz
GS
C
= 0V
= 25
C
= 125
o
C
o
C
o
Tape Width
C
-
Min.
600
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8305
Typ.
0.73
28.7
200
361
192
896
230
213
1.8
3.3
1.2
92
44
95
51
44
43
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
11045
Max.
±100
38.0
100
480
300
228
112
436
5.0
1.2
5.0
10
76
98
96
30
-
-
-
-
-
-
-
-
-
-
Units
V/
mΩ
μA
nC
nC
nC
nA
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
μC
V
Ω
A
A
V
V
S
o
C