FCH76N60NF Fairchild Semiconductor, FCH76N60NF Datasheet - Page 3

MOSFET N-CH 600V 72.8A TO247-3

FCH76N60NF

Manufacturer Part Number
FCH76N60NF
Description
MOSFET N-CH 600V 72.8A TO247-3
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet

Specifications of FCH76N60NF

Input Capacitance (ciss) @ Vds
11045pF @ 100V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
38 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
72.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
300nC @ 10V
Power - Max
543W
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
28.7 mOhms
Forward Transconductance Gfs (max / Min)
92 S
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
72.8 A
Power Dissipation
543 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCH76N60NF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FCH76N60NF
Quantity:
780
Company:
Part Number:
FCH76N60NF
Quantity:
780
FCH76N60NF Rev. A2
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
10
10
10
10
10
Figure 1. On-Region Characteristics
300
100
1
0.01
5
4
3
2
10
50
45
40
35
30
25
2
0.1
C
C
C
*Note:
0
iss
oss
rss
1. V
2. f = 1MHz
V
= C
GS
= C
= C
GS
= 15V
gs
gd
V
ds
0.1
5.5V
4.5V
Drain Current and Gate Voltage
= 0V
DS
10V
+ C
8V
6V
5V
+ C
V
50
, Drain-Source Voltage [V]
DS
gd
gd
, Drain-Source Voltage[V]
(
I
C
D
, Drain Current [A]
ds
= shorted
1
100
1
V
GS
C
C
C
oss
rss
iss
= 10V
)
*Notes:
10
150
1. 250
2. T
*Note: T
V
C
GS
= 25
μ
s Pulse Test
= 20V
100
o
200
C
C
= 25
10
o
600
C
250
20
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
500
100
400
100
Figure 6. Gate Charge Characteristics
10
10
1
1
10
0.0
2
8
6
4
2
0
0
V
SD
Variation vs. Source Current
and Temperature
, Body Diode Forward Voltage [V]
150
V
GS
o
Q
60
C
, Gate-Source Voltage[V]
g
150
0.5
, Total Gate Charge [nC]
4
o
C
-55
V
V
V
DS
DS
DS
o
25
C
120
= 120V
= 300V
= 480V
o
C
*Notes:
1. V
2. 250
25
*Notes:
1. V
2. 250
o
1.0
DS
6
C
GS
*Note: I
μ
= 20V
s Pulse Test
μ
= 0V
s Pulse Test
180
D
www.fairchildsemi.com
= 38A
1.5
8
240

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