FDD7N25LZTM Fairchild Semiconductor, FDD7N25LZTM Datasheet - Page 7
![MOSFET N-CH 250V 6.2A DPAK-3](/photos/16/7/160789/d2pak-3_sml.jpg)
FDD7N25LZTM
Manufacturer Part Number
FDD7N25LZTM
Description
MOSFET N-CH 250V 6.2A DPAK-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDD7N25LZTM.pdf
(8 pages)
Specifications of FDD7N25LZTM
Input Capacitance (ciss) @ Vds
635pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
550 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
6.2A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Power - Max
56W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.43 Ohms
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
250 V
Continuous Drain Current
6.2 A
Power Dissipation
56 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
Dimensions in Millimeters
www.fairchildsemi.com
FDD7N25LZ Rev. A
7