FDD7N25LZTM Fairchild Semiconductor, FDD7N25LZTM Datasheet - Page 4

• Manufacturer Part Number: FDD7N25LZTM
• Description: MOSFET N-CH 250V 6.2A DPAK-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDD7N25LZTM

• Input Capacitance (ciss) @ Vds: 635pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 550 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.43 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 250 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD7N25LZ Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
1.2
1.1
1.0
0.9
0.8
0.1
40
10
1
-80
0.1
-40
Operation in This Area
is Limited by R
vs. Temperature
T
- FDD7N25LZ
J
V
, Junction Temperature
DS
1
, Drain-Source Voltage [V]
0
0.01
0.1
1
5
10
DS(on)
-5
40
0.5
* Notes :
Single pulse
0.2
0.1
0.05
0.02
0.01
1. T
2. T
3. Single Pulse
10
Figure 11. Transient Thermal Response Curve
C
J
= 150
= 25
80
* Notes :
o
o
C
1. V
2. I
[
C
10
o
C
10ms
D
1ms
120
GS
-4
]
100
100
DC
= 250uA
= 0V

s
- FDD7N25LZ
30
Rectangular Pulse Duration [sec]

160
s
400
(Continued)
10
-3
4
Figure 8. On-Resistance Variation
10
3.0
2.5
2.0
1.5
1.0
0.5
Figure 10. Maximum Drain Current
6
5
4
3
2
1
0
0
-2
25
-80
* Notes :
1. Z
2. Duty Factor, D=t
3. T
P
DM
-40

JM
JC
50
T
T
(t) = 2.2
- T
vs. Temperature
J
C
, Junction Temperature
, Case Temperature
C
vs. Case Temperature
10
= P
t
1
-1
t
2
0
o
DM
C/W Max.
75
* Z
1
/t

2
JC
40
(t)
100
1
80
[
o
C
* Notes :
]
[
1. V
2. I
o
125
C
D
120
]
GS
= 3.1A
= 10V
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150
160