FDD7N25LZTM Fairchild Semiconductor, FDD7N25LZTM Datasheet
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FDD7N25LZTM
Specifications of FDD7N25LZTM
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FDD7N25LZTM Summary of contents
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... Thermal Characteristics Symbol R Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDD7N25LZ Rev. A Description = 3.1A These N-Channel enhancement mode power field effect transistors D are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize ...
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Package Marking and Ordering Information Device Marking Device FDD7N25LZ FDD7N25LZ Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate ...
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Typical Performance Characteristics Figure 1. On-Region Characteristics 10. 7.0V 5.0V 3.5V 3.0V 2.5V 1 0.1 0.03 0.03 0 Drain-Source Voltage[V] DS Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1.5 1.2 ...
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Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -80 - Junction Temperature J Figure 9. Maximum Safe Operating Area - FDD7N25LZ Operation in This Area is ...
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FDD7N25LZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDD7N25LZ Rev. A Peak Diode Recovery dv/dt Test ...
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Mechanical Dimensions FDD7N25LZ Rev. A D-PAK 7 Dimensions in Millimeters Dimensions in Millimeters www.fairchildsemi.com ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ F-PFS™ ® Auto-SPM™ FRFET Build it Now™ Global Power Resource CorePLUS™ ...