PSMN1R5-30YL,115 NXP Semiconductors, PSMN1R5-30YL,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN1R5-30YL,115
• Description: MOSFET N-CH 30V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R5-30YL,115

• Input Capacitance (ciss) @ Vds: 5057pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 77.9nC @ 10V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5589-2

NXP Semiconductors
PSMN1R5-30YL
Product data sheet
Fig 8.
Fig 10. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(S)
g
200
150
100
3.0
2.5
2.0
1.5
1.0
fs
50
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
2
0
20
4
40
6
60
8
All information provided in this document is subject to legal disclaimers.
003aac452
V
003aac451
I
D
GS
(A)
(V)
80
10
Rev. 01 — 9 April 2010
N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK
Fig 9.
Fig 11. Transfer characteristics: drain current as a
8000
6000
4000
2000
(pF)
C
(A)
I
80
60
40
20
D
0
0
function of gate-source voltage; typical values
function of gate-source voltage; typical values
Input and reverse transfer capacitances as a
2
0
C
C
iss
rss
4
1
T
j
= 175 °C
PSMN1R5-30YL
6
2
T
8
3
j
© NXP B.V. 2010. All rights reserved.
= 25 °C
V
003aac455
003aad113
V
GS
GS
(V)
(V)
10
4
8 of 15