PSMN1R5-30YL,115 NXP Semiconductors, PSMN1R5-30YL,115 Datasheet - Page 10

• Manufacturer Part Number: PSMN1R5-30YL,115
• Description: MOSFET N-CH 30V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R5-30YL,115

• Input Capacitance (ciss) @ Vds: 5057pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 77.9nC @ 10V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5589-2

NXP Semiconductors
PSMN1R5-30YL
Product data sheet
Fig 16. Gate-source voltage as a function of gate
Fig 18. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
10
GS
8
6
4
2
0
charge; typical values
0
V
DS
20
= 12 (V)
40
V
DS
= 19 (V)
100
(A)
I
80
60
40
20
S
60
0
0.0
All information provided in this document is subject to legal disclaimers.
Q
003aac448
G
(nC)
0.2
80
Rev. 01 — 9 April 2010
0.4
T
j
= 150 °C
N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK
Fig 17. Input, output and reverse transfer capacitances
0.6
6000
4000
2000
(pF)
C
0
10
as a function of drain-source voltage; typical
values
0.8
-1
C
C
C
003aac447
25 °C
oss
iss
rss
V
SD
(V)
1.0
1
PSMN1R5-30YL
10
V
© NXP B.V. 2010. All rights reserved.
DS
003aac454
(V)
10
2
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